JPS56130969A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56130969A JPS56130969A JP3334580A JP3334580A JPS56130969A JP S56130969 A JPS56130969 A JP S56130969A JP 3334580 A JP3334580 A JP 3334580A JP 3334580 A JP3334580 A JP 3334580A JP S56130969 A JPS56130969 A JP S56130969A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gate electrode
- electrode plate
- plate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3334580A JPS56130969A (en) | 1980-03-18 | 1980-03-18 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3334580A JPS56130969A (en) | 1980-03-18 | 1980-03-18 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11981080A Division JPS56131955A (en) | 1980-09-01 | 1980-09-01 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56130969A true JPS56130969A (en) | 1981-10-14 |
JPS6154262B2 JPS6154262B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Family
ID=12383971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3334580A Granted JPS56130969A (en) | 1980-03-18 | 1980-03-18 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56130969A (enrdf_load_stackoverflow) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148433A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS5986260A (ja) * | 1982-11-10 | 1984-05-18 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタ |
JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS61208873A (ja) * | 1985-03-13 | 1986-09-17 | Res Dev Corp Of Japan | 圧接構造型両面ゲ−ト静電誘導サイリスタ |
JPS6276636A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
JPS6279668A (ja) * | 1985-10-02 | 1987-04-13 | Hitachi Ltd | 平形半導体装置 |
JPH0382080A (ja) * | 1989-08-24 | 1991-04-08 | Mitsubishi Electric Corp | バイポーラ型半導体スィッチング装置 |
DE102004006989B4 (de) * | 2003-02-12 | 2012-11-08 | Mitsubishi Denki K.K. | Halbleitervorrichtung in Druckkontaktbauweise |
-
1980
- 1980-03-18 JP JP3334580A patent/JPS56130969A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148433A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS5986260A (ja) * | 1982-11-10 | 1984-05-18 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタ |
JPS60194565A (ja) * | 1984-03-15 | 1985-10-03 | Mitsubishi Electric Corp | 半導体装置 |
JPS61208873A (ja) * | 1985-03-13 | 1986-09-17 | Res Dev Corp Of Japan | 圧接構造型両面ゲ−ト静電誘導サイリスタ |
JPS6276636A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 半導体装置 |
JPS6279668A (ja) * | 1985-10-02 | 1987-04-13 | Hitachi Ltd | 平形半導体装置 |
JPH0382080A (ja) * | 1989-08-24 | 1991-04-08 | Mitsubishi Electric Corp | バイポーラ型半導体スィッチング装置 |
DE102004006989B4 (de) * | 2003-02-12 | 2012-11-08 | Mitsubishi Denki K.K. | Halbleitervorrichtung in Druckkontaktbauweise |
Also Published As
Publication number | Publication date |
---|---|
JPS6154262B2 (enrdf_load_stackoverflow) | 1986-11-21 |
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