JPS5612773A - Silicon gate mos field-effect transistor - Google Patents

Silicon gate mos field-effect transistor

Info

Publication number
JPS5612773A
JPS5612773A JP8873279A JP8873279A JPS5612773A JP S5612773 A JPS5612773 A JP S5612773A JP 8873279 A JP8873279 A JP 8873279A JP 8873279 A JP8873279 A JP 8873279A JP S5612773 A JPS5612773 A JP S5612773A
Authority
JP
Japan
Prior art keywords
source
drain
effect transistor
mos field
silicon gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8873279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331111B2 (enExample
Inventor
Toshiyuki Misawa
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8873279A priority Critical patent/JPS5612773A/ja
Publication of JPS5612773A publication Critical patent/JPS5612773A/ja
Publication of JPS6331111B2 publication Critical patent/JPS6331111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP8873279A 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor Granted JPS5612773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8873279A JPS5612773A (en) 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8873279A JPS5612773A (en) 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5612773A true JPS5612773A (en) 1981-02-07
JPS6331111B2 JPS6331111B2 (enExample) 1988-06-22

Family

ID=13951086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8873279A Granted JPS5612773A (en) 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5612773A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466958A (en) * 1992-10-30 1995-11-14 Kabushiki Kaisha Toshiba MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
JP2014053414A (ja) * 2012-09-06 2014-03-20 Denso Corp 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286084A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Field effect transistor
JPS5432078A (en) * 1977-08-16 1979-03-09 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286084A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Field effect transistor
JPS5432078A (en) * 1977-08-16 1979-03-09 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466958A (en) * 1992-10-30 1995-11-14 Kabushiki Kaisha Toshiba MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
US5756365A (en) * 1992-10-30 1998-05-26 Kabushiki Kaisha Toshiba Method of manufacturing MOS-type semiconductor device having electrode structure capable of coping with short-channel effects
JP2014053414A (ja) * 2012-09-06 2014-03-20 Denso Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6331111B2 (enExample) 1988-06-22

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