JPS56120140A - Semiconductor and its manufacture - Google Patents

Semiconductor and its manufacture

Info

Publication number
JPS56120140A
JPS56120140A JP2291380A JP2291380A JPS56120140A JP S56120140 A JPS56120140 A JP S56120140A JP 2291380 A JP2291380 A JP 2291380A JP 2291380 A JP2291380 A JP 2291380A JP S56120140 A JPS56120140 A JP S56120140A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor element
higher concentration
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2291380A
Other languages
Japanese (ja)
Inventor
Kuniyoshi Yoshikawa
Masaharu Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2291380A priority Critical patent/JPS56120140A/en
Publication of JPS56120140A publication Critical patent/JPS56120140A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To separate an element and improve its reliability by providing a layer of higher concentration than a semiconductor element substrate and a layer of lower concentration than the former but of higher concentration than the substrate each at the lower part of a field insulation layer and a part overlapping a part of the region of a semiconductor element at the periphery. CONSTITUTION:A semiconductor element is formed on one main surface of P type semiconductor substrate 21 and field insulation films 22-24 are formed on the peripheral region of a region where the said semiconductor element is formed. Then P<++> layers 25, 26 of higher concentration than the substrate 21 are provided at the lower part of the insulation films 22-24. In addition, highly concentrated layer, 28, 29 which are of the same concentraton as or higher concentration than the substrate 21 formed at a part overlapping a part of the region of a semiconductor element at the periphery of the insulation films 22-24, are provided. Following this procedure, field films 30-32 are formed with gate electrodes 331, 332.... At the same time, N type layers 34, 34... are formed and electrodes are wired by means of wiring patterning to complete a semiconductor device. Thus it is possible to control the gate threshold value voltage of a field parasitic MOS transistor and the voltage withstanding capacity of PN seamed part and consequently separate an element and improve its reliability.
JP2291380A 1980-02-26 1980-02-26 Semiconductor and its manufacture Pending JPS56120140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2291380A JPS56120140A (en) 1980-02-26 1980-02-26 Semiconductor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2291380A JPS56120140A (en) 1980-02-26 1980-02-26 Semiconductor and its manufacture

Publications (1)

Publication Number Publication Date
JPS56120140A true JPS56120140A (en) 1981-09-21

Family

ID=12095871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2291380A Pending JPS56120140A (en) 1980-02-26 1980-02-26 Semiconductor and its manufacture

Country Status (1)

Country Link
JP (1) JPS56120140A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225857A (en) * 1985-03-29 1986-10-07 Nippon Telegr & Teleph Corp <Ntt> Manufacture of complementary semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225857A (en) * 1985-03-29 1986-10-07 Nippon Telegr & Teleph Corp <Ntt> Manufacture of complementary semiconductor device

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