JPS56115526A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56115526A
JPS56115526A JP1767080A JP1767080A JPS56115526A JP S56115526 A JPS56115526 A JP S56115526A JP 1767080 A JP1767080 A JP 1767080A JP 1767080 A JP1767080 A JP 1767080A JP S56115526 A JPS56115526 A JP S56115526A
Authority
JP
Japan
Prior art keywords
ion
annealing
rearrangement
ion current
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1767080A
Other languages
Japanese (ja)
Inventor
Shunichi Maekawa
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1767080A priority Critical patent/JPS56115526A/en
Publication of JPS56115526A publication Critical patent/JPS56115526A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Abstract

PURPOSE:To improve the machining accuracy of the subject semiconductor device by a method wherein, at the time of ion injection, the high density ion current sufficient to enable regulated rearrangement of stoms on a semiconductor surface layer is generated causing a self-annealing. CONSTITUTION:Using the mechanism of plasma containment and accumulation as the ion source 1 of an ion injecting device, ion current density is increased (for example, 0.5-several J/cm<2>) by a switch controlling section 2 in the manner that the confined plasma is brought out periodically to one direction in pulse form and this ion current is irradiated to the semiconductor substrate provided in a target chamber 6 and a self-annealing is performed simultaneously with the ion injection. Consequently, an effective annealing can be performed, there arises no problem pertaining to the rearrangement and an excellent shallow junction can be formed.
JP1767080A 1980-02-15 1980-02-15 Manufacture of semiconductor device Pending JPS56115526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1767080A JPS56115526A (en) 1980-02-15 1980-02-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1767080A JPS56115526A (en) 1980-02-15 1980-02-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56115526A true JPS56115526A (en) 1981-09-10

Family

ID=11950283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1767080A Pending JPS56115526A (en) 1980-02-15 1980-02-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56115526A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122127A (en) * 1980-02-01 1981-09-25 Commissariat Energie Atomique Method of doping semiconductor at high speed

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122127A (en) * 1980-02-01 1981-09-25 Commissariat Energie Atomique Method of doping semiconductor at high speed

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