Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP8084977ApriorityCriticalpatent/JPS5415671A/en
Publication of JPS5415671ApublicationCriticalpatent/JPS5415671A/en
Publication of JPS562410B2publicationCriticalpatent/JPS562410B2/ja
PURPOSE: To facilitate an easy process control by forming a shallow Al introduction layer through the recoil injection and stopping assuredly the plasma dry etching at the fixed depth.
COPYRIGHT: (C)1979,JPO&Japio
JP8084977A1977-07-061977-07-06Manufacture of semiconductor device
GrantedJPS5415671A
(en)