JPS56110263A - Thyristor element - Google Patents
Thyristor elementInfo
- Publication number
- JPS56110263A JPS56110263A JP1147180A JP1147180A JPS56110263A JP S56110263 A JPS56110263 A JP S56110263A JP 1147180 A JP1147180 A JP 1147180A JP 1147180 A JP1147180 A JP 1147180A JP S56110263 A JPS56110263 A JP S56110263A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- electrode
- gate
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 230000000630 rising effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1147180A JPS56110263A (en) | 1980-02-04 | 1980-02-04 | Thyristor element |
GB8102638A GB2070330B (en) | 1980-02-04 | 1981-01-28 | Thyristor elements |
DE19813102916 DE3102916C2 (de) | 1980-02-04 | 1981-01-29 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1147180A JPS56110263A (en) | 1980-02-04 | 1980-02-04 | Thyristor element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56110263A true JPS56110263A (en) | 1981-09-01 |
JPH0126190B2 JPH0126190B2 (ja) | 1989-05-22 |
Family
ID=11778982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1147180A Granted JPS56110263A (en) | 1980-02-04 | 1980-02-04 | Thyristor element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS56110263A (ja) |
DE (1) | DE3102916C2 (ja) |
GB (1) | GB2070330B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01102963A (ja) * | 1987-10-16 | 1989-04-20 | Toshiba Corp | 半導体装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3112942A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor und verfahren zu seinem betrieb |
DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
EP0164106B1 (en) * | 1984-06-05 | 1989-09-13 | Kabushiki Kaisha Toshiba | Pnpn switch device |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
DE2945335A1 (de) * | 1979-11-09 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor |
-
1980
- 1980-02-04 JP JP1147180A patent/JPS56110263A/ja active Granted
-
1981
- 1981-01-28 GB GB8102638A patent/GB2070330B/en not_active Expired
- 1981-01-29 DE DE19813102916 patent/DE3102916C2/de not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01102963A (ja) * | 1987-10-16 | 1989-04-20 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE3102916C2 (de) | 1986-04-03 |
GB2070330A (en) | 1981-09-03 |
GB2070330B (en) | 1984-09-05 |
DE3102916A1 (de) | 1981-12-10 |
JPH0126190B2 (ja) | 1989-05-22 |
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