JPS56110263A - Thyristor element - Google Patents

Thyristor element

Info

Publication number
JPS56110263A
JPS56110263A JP1147180A JP1147180A JPS56110263A JP S56110263 A JPS56110263 A JP S56110263A JP 1147180 A JP1147180 A JP 1147180A JP 1147180 A JP1147180 A JP 1147180A JP S56110263 A JPS56110263 A JP S56110263A
Authority
JP
Japan
Prior art keywords
region
type
electrode
gate
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1147180A
Other languages
English (en)
Other versions
JPH0126190B2 (ja
Inventor
Jun Ueda
Haruo Mori
Kazuo Hagimura
Yoshiyuki Hirose
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1147180A priority Critical patent/JPS56110263A/ja
Priority to GB8102638A priority patent/GB2070330B/en
Priority to DE19813102916 priority patent/DE3102916C2/de
Publication of JPS56110263A publication Critical patent/JPS56110263A/ja
Publication of JPH0126190B2 publication Critical patent/JPH0126190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP1147180A 1980-02-04 1980-02-04 Thyristor element Granted JPS56110263A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1147180A JPS56110263A (en) 1980-02-04 1980-02-04 Thyristor element
GB8102638A GB2070330B (en) 1980-02-04 1981-01-28 Thyristor elements
DE19813102916 DE3102916C2 (de) 1980-02-04 1981-01-29 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147180A JPS56110263A (en) 1980-02-04 1980-02-04 Thyristor element

Publications (2)

Publication Number Publication Date
JPS56110263A true JPS56110263A (en) 1981-09-01
JPH0126190B2 JPH0126190B2 (ja) 1989-05-22

Family

ID=11778982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147180A Granted JPS56110263A (en) 1980-02-04 1980-02-04 Thyristor element

Country Status (3)

Country Link
JP (1) JPS56110263A (ja)
DE (1) DE3102916C2 (ja)
GB (1) GB2070330B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01102963A (ja) * 1987-10-16 1989-04-20 Toshiba Corp 半導体装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
EP0164106B1 (en) * 1984-06-05 1989-09-13 Kabushiki Kaisha Toshiba Pnpn switch device
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01102963A (ja) * 1987-10-16 1989-04-20 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE3102916C2 (de) 1986-04-03
GB2070330A (en) 1981-09-03
GB2070330B (en) 1984-09-05
DE3102916A1 (de) 1981-12-10
JPH0126190B2 (ja) 1989-05-22

Similar Documents

Publication Publication Date Title
JPS56161676A (en) Electrode structure for thin film transistor
JPS57162359A (en) Semiconductor device
JPS5279679A (en) Semiconductor memory device
JPS56169369A (en) High withstand voltage mos field effect semiconductor device
JPS5718356A (en) Semiconductor memory storage
JPS56110263A (en) Thyristor element
JPS5745975A (en) Input protecting device for semiconductor device
JPS5762564A (en) Tunnel effect type protecting device
JPS5587481A (en) Mis type semiconductor device
JPS57118664A (en) Semiconductor device
JPS52120774A (en) Semiconductor device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS6489457A (en) Manufacture of semiconductor device
JPS5771179A (en) Input protective circuit device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS56165358A (en) Semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS57154875A (en) Mos semiconductor device
JPS5740973A (en) Inverter circuit and manufacture therefor
JPS5724566A (en) Protective circuit for mos type gate
JPS5552262A (en) Mos semiconductor device
JPS5314581A (en) Thyristor
JPS57206062A (en) Semiconductor integrated circuit
JPS6481367A (en) Power insulated-gate semiconductor device
JPS5325354A (en) Semiconductor device