JPS5610923A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5610923A
JPS5610923A JP8527179A JP8527179A JPS5610923A JP S5610923 A JPS5610923 A JP S5610923A JP 8527179 A JP8527179 A JP 8527179A JP 8527179 A JP8527179 A JP 8527179A JP S5610923 A JPS5610923 A JP S5610923A
Authority
JP
Japan
Prior art keywords
film
positioning
opening
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8527179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250973B2 (enrdf_load_stackoverflow
Inventor
Yuichi Hirofuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8527179A priority Critical patent/JPS5610923A/ja
Publication of JPS5610923A publication Critical patent/JPS5610923A/ja
Publication of JPS6250973B2 publication Critical patent/JPS6250973B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
JP8527179A 1979-07-05 1979-07-05 Preparation of semiconductor device Granted JPS5610923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8527179A JPS5610923A (en) 1979-07-05 1979-07-05 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8527179A JPS5610923A (en) 1979-07-05 1979-07-05 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5610923A true JPS5610923A (en) 1981-02-03
JPS6250973B2 JPS6250973B2 (enrdf_load_stackoverflow) 1987-10-28

Family

ID=13853897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8527179A Granted JPS5610923A (en) 1979-07-05 1979-07-05 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5610923A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101757A (en) * 1980-01-18 1981-08-14 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57178367A (en) * 1981-04-14 1982-11-02 Itt Method of producing integrated planar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101757A (en) * 1980-01-18 1981-08-14 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57178367A (en) * 1981-04-14 1982-11-02 Itt Method of producing integrated planar transistor

Also Published As

Publication number Publication date
JPS6250973B2 (enrdf_load_stackoverflow) 1987-10-28

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