JPS56108259A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS56108259A JPS56108259A JP992980A JP992980A JPS56108259A JP S56108259 A JPS56108259 A JP S56108259A JP 992980 A JP992980 A JP 992980A JP 992980 A JP992980 A JP 992980A JP S56108259 A JPS56108259 A JP S56108259A
- Authority
- JP
- Japan
- Prior art keywords
- selecting
- bit lines
- lines
- line
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP992980A JPS56108259A (en) | 1980-02-01 | 1980-02-01 | Semiconductor memory device |
US06/228,086 US4451904A (en) | 1980-02-01 | 1981-01-26 | Semiconductor memory device |
DE19813103143 DE3103143A1 (de) | 1980-02-01 | 1981-01-30 | Halbleiterspeicher |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP992980A JPS56108259A (en) | 1980-02-01 | 1980-02-01 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56108259A true JPS56108259A (en) | 1981-08-27 |
Family
ID=11733752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP992980A Pending JPS56108259A (en) | 1980-02-01 | 1980-02-01 | Semiconductor memory device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4451904A (ja) |
JP (1) | JPS56108259A (ja) |
DE (1) | DE3103143A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
JPH02291168A (ja) * | 1989-03-15 | 1990-11-30 | Sgs Thomson Microelectron Srl | Epromメモリセル構造 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5713772A (en) * | 1980-06-30 | 1982-01-23 | Hitachi Ltd | Semiconductor device and manufacture thereof |
DE3141390A1 (de) * | 1981-10-19 | 1983-04-28 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt |
US4590504A (en) * | 1982-12-28 | 1986-05-20 | Thomson Components - Mostek Corporation | Nonvolatile MOS memory cell with tunneling element |
US4949154A (en) * | 1983-02-23 | 1990-08-14 | Texas Instruments, Incorporated | Thin dielectrics over polysilicon |
US4697330A (en) * | 1983-02-23 | 1987-10-06 | Texas Instruments Incorporated | Floating gate memory process with improved dielectric |
USRE34535E (en) * | 1983-02-23 | 1994-02-08 | Texas Instruments Incorporated | Floating gate memory with improved dielectric |
US4701776A (en) * | 1983-08-29 | 1987-10-20 | Seeq Technology, Inc. | MOS floating gate memory cell and process for fabricating same |
US4769340A (en) * | 1983-11-28 | 1988-09-06 | Exel Microelectronics, Inc. | Method for making electrically programmable memory device by doping the floating gate by implant |
US4654825A (en) * | 1984-01-06 | 1987-03-31 | Advanced Micro Devices, Inc. | E2 prom memory cell |
JP2515715B2 (ja) * | 1984-02-24 | 1996-07-10 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
IT1213241B (it) * | 1984-11-07 | 1989-12-14 | Ates Componenti Elettron | Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura. |
FR2603128B1 (fr) * | 1986-08-21 | 1988-11-10 | Commissariat Energie Atomique | Cellule de memoire eprom et son procede de fabrication |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US4812885A (en) * | 1987-08-04 | 1989-03-14 | Texas Instruments Incorporated | Capacitive coupling |
US4780424A (en) * | 1987-09-28 | 1988-10-25 | Intel Corporation | Process for fabricating electrically alterable floating gate memory devices |
JPH021988A (ja) * | 1987-12-03 | 1990-01-08 | Texas Instr Inc <Ti> | 電気的にプログラム可能なメモリ・セル |
JPH0797608B2 (ja) * | 1988-10-19 | 1995-10-18 | 株式会社東芝 | 不揮発性半導体メモリおよびその製造方法 |
US5262846A (en) * | 1988-11-14 | 1993-11-16 | Texas Instruments Incorporated | Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates |
JP2772020B2 (ja) * | 1989-02-22 | 1998-07-02 | 株式会社東芝 | Mos型半導体装置 |
US5172198A (en) * | 1989-02-22 | 1992-12-15 | Kabushiki Kaisha Toshiba | MOS type semiconductor device |
IT1229131B (it) * | 1989-03-09 | 1991-07-22 | Sgs Thomson Microelectronics | Matrice di memoria eprom con struttura a tovaglia e procedimento per la sua fabbricazione. |
JPH088316B2 (ja) * | 1990-01-31 | 1996-01-29 | 株式会社東芝 | 紫外線消去型不揮発性半導体メモリ装置 |
US5371031A (en) * | 1990-08-01 | 1994-12-06 | Texas Instruments Incorporated | Method of making EEPROM array with buried N+ windows and with separate erasing and programming regions |
US5273926A (en) * | 1991-06-27 | 1993-12-28 | Texas Instruments Incorporated | Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity |
US5218568A (en) * | 1991-12-17 | 1993-06-08 | Texas Instruments Incorporated | Electrically-erasable, electrically-programmable read-only memory cell, an array of such cells and methods for making and using the same |
EP0552531B1 (en) * | 1992-01-22 | 2000-08-16 | Macronix International Co., Ltd. | Non-volatile memory cell and array architecture |
GB9217743D0 (en) * | 1992-08-19 | 1992-09-30 | Philips Electronics Uk Ltd | A semiconductor memory device |
EP0830684B1 (en) * | 1995-06-07 | 2004-08-25 | Macronix International Co., Ltd. | Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width |
DE19946884A1 (de) * | 1999-09-30 | 2001-04-12 | Micronas Gmbh | Eprom-Struktur für Halbleiterspeicher |
US8017480B2 (en) * | 2006-06-13 | 2011-09-13 | Macronix International Co., Ltd. | Apparatus and associated method for making a floating gate cell in a virtual ground array |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4122544A (en) * | 1976-12-27 | 1978-10-24 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device with series enhancement transistor |
US4173791A (en) * | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory array |
US4145759A (en) * | 1978-04-13 | 1979-03-20 | Motorola, Inc. | Virtual power supply ROM |
US4335391A (en) * | 1978-12-11 | 1982-06-15 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements and methods of making |
JPS5654693A (en) * | 1979-10-05 | 1981-05-14 | Hitachi Ltd | Programable rom |
-
1980
- 1980-02-01 JP JP992980A patent/JPS56108259A/ja active Pending
-
1981
- 1981-01-26 US US06/228,086 patent/US4451904A/en not_active Expired - Lifetime
- 1981-01-30 DE DE19813103143 patent/DE3103143A1/de not_active Ceased
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
JPH02291168A (ja) * | 1989-03-15 | 1990-11-30 | Sgs Thomson Microelectron Srl | Epromメモリセル構造 |
Also Published As
Publication number | Publication date |
---|---|
DE3103143A1 (de) | 1981-12-03 |
US4451904A (en) | 1984-05-29 |
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