JPS56105641A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56105641A
JPS56105641A JP817580A JP817580A JPS56105641A JP S56105641 A JPS56105641 A JP S56105641A JP 817580 A JP817580 A JP 817580A JP 817580 A JP817580 A JP 817580A JP S56105641 A JPS56105641 A JP S56105641A
Authority
JP
Japan
Prior art keywords
implanted
ions
constitution
heat
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP817580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0235457B2 (en:Method
Inventor
Makoto Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP817580A priority Critical patent/JPS56105641A/ja
Publication of JPS56105641A publication Critical patent/JPS56105641A/ja
Publication of JPH0235457B2 publication Critical patent/JPH0235457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP817580A 1980-01-25 1980-01-25 Semiconductor device Granted JPS56105641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP817580A JPS56105641A (en) 1980-01-25 1980-01-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP817580A JPS56105641A (en) 1980-01-25 1980-01-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56105641A true JPS56105641A (en) 1981-08-22
JPH0235457B2 JPH0235457B2 (en:Method) 1990-08-10

Family

ID=11685977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP817580A Granted JPS56105641A (en) 1980-01-25 1980-01-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56105641A (en:Method)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (ja) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> ゲッタリング方法
JPS5854672A (ja) * 1981-09-28 1983-03-31 Fujitsu Ltd 半導体装置
US5098852A (en) * 1989-07-05 1992-03-24 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device by mega-electron volt ion implantation
US5151766A (en) * 1989-05-18 1992-09-29 Asea Brown Boveri Ltd. Semiconductor component
US5229305A (en) * 1992-02-03 1993-07-20 Motorola, Inc. Method for making intrinsic gettering sites in bonded substrates
EP1032027A3 (en) * 1999-02-22 2004-11-24 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (ja) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> ゲッタリング方法
JPS5854672A (ja) * 1981-09-28 1983-03-31 Fujitsu Ltd 半導体装置
US5151766A (en) * 1989-05-18 1992-09-29 Asea Brown Boveri Ltd. Semiconductor component
US5098852A (en) * 1989-07-05 1992-03-24 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device by mega-electron volt ion implantation
US5229305A (en) * 1992-02-03 1993-07-20 Motorola, Inc. Method for making intrinsic gettering sites in bonded substrates
EP1032027A3 (en) * 1999-02-22 2004-11-24 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method

Also Published As

Publication number Publication date
JPH0235457B2 (en:Method) 1990-08-10

Similar Documents

Publication Publication Date Title
JPS56105641A (en) Semiconductor device
JPS5567132A (en) Method for manufacturing semiconductor device
JPS5633821A (en) Photoannealing method for semiconductor layer
EP0415107A3 (en) Method of treating gold plating film
JPS5635434A (en) Manufacturing of semiconductor device
JPS56138920A (en) Method of selection and diffusion for impurities
JPS5710267A (en) Semiconductor device
JPS567439A (en) Treating method for semiconductor substrate
JPS57177530A (en) Processing of semiconductor wafer
JPS57106046A (en) Manufacture of semiconductor device
JPS5754333A (en) Semiconductor device and preparation thereof
JPS63271923A (ja) 化合物半導体基板の熱処理方法
JPS5650520A (en) Processing method of semiconductor substrate
JPS56157019A (en) Manufacture of substrate for semiconductor device
JPS5650511A (en) Manufacture of semiconductor device
JPS5730324A (en) Formation of semiconductor hybrid single crystal layer
JPS57107074A (en) Semiconductor device
JPS6473615A (en) Manufacture of iii-v compound semiconductor device
JPS5513930A (en) Manufacturing method for semiconductor device
JPS56144544A (en) Manufacture of semiconductor device
JPS6465865A (en) Manufacture of complementary semiconductor device
JPS57153429A (en) Manufacture of semiconductor device
WO1996035229A1 (en) Process for the localized reduction of the lifetime
JPS57113233A (en) Manufacture of semiconductor device
JPS55162234A (en) Manufacture of semiconductor device