JPH0235457B2 - - Google Patents

Info

Publication number
JPH0235457B2
JPH0235457B2 JP55008175A JP817580A JPH0235457B2 JP H0235457 B2 JPH0235457 B2 JP H0235457B2 JP 55008175 A JP55008175 A JP 55008175A JP 817580 A JP817580 A JP 817580A JP H0235457 B2 JPH0235457 B2 JP H0235457B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
getter
drain
getter layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55008175A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56105641A (en
Inventor
Makoto Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP817580A priority Critical patent/JPS56105641A/ja
Publication of JPS56105641A publication Critical patent/JPS56105641A/ja
Publication of JPH0235457B2 publication Critical patent/JPH0235457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP817580A 1980-01-25 1980-01-25 Semiconductor device Granted JPS56105641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP817580A JPS56105641A (en) 1980-01-25 1980-01-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP817580A JPS56105641A (en) 1980-01-25 1980-01-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56105641A JPS56105641A (en) 1981-08-22
JPH0235457B2 true JPH0235457B2 (en:Method) 1990-08-10

Family

ID=11685977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP817580A Granted JPS56105641A (en) 1980-01-25 1980-01-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56105641A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (ja) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> ゲッタリング方法
JPS5854672A (ja) * 1981-09-28 1983-03-31 Fujitsu Ltd 半導体装置
DE59003052D1 (de) * 1989-05-18 1993-11-18 Asea Brown Boveri Halbleiterbauelement.
JPH0338044A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 半導体装置の製造方法
US5229305A (en) * 1992-02-03 1993-07-20 Motorola, Inc. Method for making intrinsic gettering sites in bonded substrates
US6255195B1 (en) * 1999-02-22 2001-07-03 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method

Also Published As

Publication number Publication date
JPS56105641A (en) 1981-08-22

Similar Documents

Publication Publication Date Title
JP2558931B2 (ja) 半導体装置およびその製造方法
JPH05109737A (ja) 薄膜トランジスタの製造方法
KR100935567B1 (ko) 반도체 장치 및 그 제조 방법
JPS61145868A (ja) 半導体装置の製造方法
JPH11297703A (ja) 半導体装置の製造方法
JPH0235457B2 (en:Method)
US4445270A (en) Low resistance contact for high density integrated circuit
US6413841B1 (en) MOS type semiconductor device and manufacturing method thereof
EP0405063A2 (en) An insulated-gate fet on an soi-structure
JP3091800B2 (ja) Ｓｏｉ基板の製造方法
JPS60224272A (ja) 絶縁基板ｍｉｓ型電界効果トランジスタの製造方法
JPS6317227B2 (en:Method)
JPS6161268B2 (en:Method)
JPS597228B2 (ja) ゼツエンゲ−トハンドウタイソウチノ セイゾウホウホウ
JPH1098004A (ja) 半導体装置およびその製造方法
JPS61247073A (ja) 半導体装置の製造方法
JP3147374B2 (ja) 半導体装置
JPH0290569A (ja) 半導体装置の製造方法
JPH05109736A (ja) 半導体装置の製造方法
EP0621629A2 (en) Method for reducing dislocations in integrated circuit devices
JPS60219771A (ja) Ｍｏｓ形半導体装置の製造方法
JPH05347353A (ja) 半導体装置の製造方法
JPS59154072A (ja) 半導体装置及びその製造方法
JPH03190221A (ja) 半導体装置の製造方法
JPH06124960A (ja) 半導体装置の製造方法