JPS56104799A - Production of si single crystal and device therefor - Google Patents
Production of si single crystal and device thereforInfo
- Publication number
- JPS56104799A JPS56104799A JP593880A JP593880A JPS56104799A JP S56104799 A JPS56104799 A JP S56104799A JP 593880 A JP593880 A JP 593880A JP 593880 A JP593880 A JP 593880A JP S56104799 A JPS56104799 A JP S56104799A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- heater
- stand
- immediately
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP593880A JPS56104799A (en) | 1980-01-22 | 1980-01-22 | Production of si single crystal and device therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP593880A JPS56104799A (en) | 1980-01-22 | 1980-01-22 | Production of si single crystal and device therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56104799A true JPS56104799A (en) | 1981-08-20 |
JPS6344720B2 JPS6344720B2 (ja) | 1988-09-06 |
Family
ID=11624833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP593880A Granted JPS56104799A (en) | 1980-01-22 | 1980-01-22 | Production of si single crystal and device therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56104799A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61201692A (ja) * | 1985-03-04 | 1986-09-06 | Mitsubishi Metal Corp | 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法 |
JPS62202900A (ja) * | 1986-03-03 | 1987-09-07 | Toshiba Corp | 半導体シリコンウエハ及びその製造方法 |
WO1998025299A1 (fr) * | 1996-12-03 | 1998-06-11 | Sumitomo Metal Industries., Ltd. | Procede de fabrication d'une tranche epitaxiee semi-conductrice de silicium et d'un dispositif semi-conducteur |
JP2019102810A (ja) * | 2017-12-06 | 2019-06-24 | エスケイ・シルトロン・カンパニー・リミテッド | ウエハーの欠陥領域を評価する方法 |
-
1980
- 1980-01-22 JP JP593880A patent/JPS56104799A/ja active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61201692A (ja) * | 1985-03-04 | 1986-09-06 | Mitsubishi Metal Corp | 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法 |
JPH0367994B2 (ja) * | 1985-03-04 | 1991-10-24 | Mitsubishi Materiaru Kk | |
JPS62202900A (ja) * | 1986-03-03 | 1987-09-07 | Toshiba Corp | 半導体シリコンウエハ及びその製造方法 |
JPH0463839B2 (ja) * | 1986-03-03 | 1992-10-13 | Tokyo Shibaura Electric Co | |
WO1998025299A1 (fr) * | 1996-12-03 | 1998-06-11 | Sumitomo Metal Industries., Ltd. | Procede de fabrication d'une tranche epitaxiee semi-conductrice de silicium et d'un dispositif semi-conducteur |
EP0954018A1 (en) * | 1996-12-03 | 1999-11-03 | Sumitomo Metal Industries Limited | Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device |
US6277193B1 (en) | 1996-12-03 | 2001-08-21 | Sumitomo Metal Industries, Ltd. | Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device |
KR100319413B1 (ko) * | 1996-12-03 | 2002-01-05 | 고지마 마타오 | 반도체 실리콘 에피택셜 웨이퍼 및 반도체 디바이스의 제조 방법 |
EP0954018A4 (en) * | 1996-12-03 | 2006-07-19 | Sumitomo Mitsubishi Silicon | METHOD FOR PRODUCING AN EPITACTIC WAFERS OF SEMICONDUCTIVE SILICON AND SEMICONDUCTOR ARRANGEMENT |
JP2019102810A (ja) * | 2017-12-06 | 2019-06-24 | エスケイ・シルトロン・カンパニー・リミテッド | ウエハーの欠陥領域を評価する方法 |
US10634622B2 (en) | 2017-12-06 | 2020-04-28 | Sk Siltron Co., Ltd. | Method of identifying defect regions in wafer |
Also Published As
Publication number | Publication date |
---|---|
JPS6344720B2 (ja) | 1988-09-06 |
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