JPS56103487A - Manufacture of gunn diode - Google Patents
Manufacture of gunn diodeInfo
- Publication number
- JPS56103487A JPS56103487A JP593780A JP593780A JPS56103487A JP S56103487 A JPS56103487 A JP S56103487A JP 593780 A JP593780 A JP 593780A JP 593780 A JP593780 A JP 593780A JP S56103487 A JPS56103487 A JP S56103487A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- layer
- gaas layer
- transition region
- sulphur
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enable to always constantly control the depth of an N-GaAs layer converted into a transition region by a method wherein an N<+>-GaAs layer is formed on the surface of the N-GaAs active layer and ions are injected. CONSTITUTION:An N<++> type buffer GaAs layer, the N-GaAs active layer 23 and the N<+>-GaAs layer 24 of sulphur or selenium doped are formed in sequence on the N<++>-GaAs substrate 21 by an epitaxial growth method. Thereafter, an impurity causing the sulphur or selenium which is kept doped in the N<+>-GaAs layer to be speed-up diffused is injected by the ion-injecting method and heat-treated, thereby enabling the N<++> type primary layer 26 and the constant thickness transition region to simultaneously be formed on the N-GaAs layer 23. Thus, the depth of the N-GaAs layer 23 converted to the transition region can always constantly be controlled. As a result, the Gunn diode less in fluctuation of the frequency is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP593780A JPS56103487A (en) | 1980-01-22 | 1980-01-22 | Manufacture of gunn diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP593780A JPS56103487A (en) | 1980-01-22 | 1980-01-22 | Manufacture of gunn diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56103487A true JPS56103487A (en) | 1981-08-18 |
| JPS6250996B2 JPS6250996B2 (en) | 1987-10-28 |
Family
ID=11624805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP593780A Granted JPS56103487A (en) | 1980-01-22 | 1980-01-22 | Manufacture of gunn diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56103487A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1267417A3 (en) * | 2001-06-14 | 2005-01-12 | Ixys Corporation | Semiconductor devices having group III-V compound layers |
| JP2009214944A (en) * | 2004-02-17 | 2009-09-24 | Menicon Singapore Pte Ltd | Package |
| US10865028B2 (en) | 2005-02-14 | 2020-12-15 | Mentcon Singapore Pte Ltd. | Heat sealable, retortable laminated foil |
-
1980
- 1980-01-22 JP JP593780A patent/JPS56103487A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1267417A3 (en) * | 2001-06-14 | 2005-01-12 | Ixys Corporation | Semiconductor devices having group III-V compound layers |
| KR100768803B1 (en) * | 2001-06-14 | 2007-10-19 | 익시스 코포레이션 | Semiconductor devices having group ?-? compound layers |
| US10786057B2 (en) | 2002-08-17 | 2020-09-29 | Menicon Singapore Pte Ltd. | Packaging for disposable soft contact lenses |
| JP2009214944A (en) * | 2004-02-17 | 2009-09-24 | Menicon Singapore Pte Ltd | Package |
| US10865028B2 (en) | 2005-02-14 | 2020-12-15 | Mentcon Singapore Pte Ltd. | Heat sealable, retortable laminated foil |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6250996B2 (en) | 1987-10-28 |
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