JPS56103444A - Production of element isolation structure for semiconductor device - Google Patents
Production of element isolation structure for semiconductor deviceInfo
- Publication number
- JPS56103444A JPS56103444A JP557480A JP557480A JPS56103444A JP S56103444 A JPS56103444 A JP S56103444A JP 557480 A JP557480 A JP 557480A JP 557480 A JP557480 A JP 557480A JP S56103444 A JPS56103444 A JP S56103444A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- film
- poly
- removal
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W10/0126—
-
- H10W10/0121—
-
- H10W10/13—
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557480A JPS56103444A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557480A JPS56103444A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56103444A true JPS56103444A (en) | 1981-08-18 |
| JPS6310897B2 JPS6310897B2 (index.php) | 1988-03-10 |
Family
ID=11614985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP557480A Granted JPS56103444A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56103444A (index.php) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US4980311A (en) * | 1987-05-05 | 1990-12-25 | Seiko Epson Corporation | Method of fabricating a semiconductor device |
| US5385861A (en) * | 1994-03-15 | 1995-01-31 | National Semiconductor Corporation | Planarized trench and field oxide and poly isolation scheme |
-
1980
- 1980-01-21 JP JP557480A patent/JPS56103444A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US4980311A (en) * | 1987-05-05 | 1990-12-25 | Seiko Epson Corporation | Method of fabricating a semiconductor device |
| US5385861A (en) * | 1994-03-15 | 1995-01-31 | National Semiconductor Corporation | Planarized trench and field oxide and poly isolation scheme |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310897B2 (index.php) | 1988-03-10 |
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