JPS6310897B2 - - Google Patents
Info
- Publication number
- JPS6310897B2 JPS6310897B2 JP55005574A JP557480A JPS6310897B2 JP S6310897 B2 JPS6310897 B2 JP S6310897B2 JP 55005574 A JP55005574 A JP 55005574A JP 557480 A JP557480 A JP 557480A JP S6310897 B2 JPS6310897 B2 JP S6310897B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon dioxide
- silicon
- dioxide film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W10/0126—
-
- H10W10/0121—
-
- H10W10/13—
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557480A JPS56103444A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557480A JPS56103444A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56103444A JPS56103444A (en) | 1981-08-18 |
| JPS6310897B2 true JPS6310897B2 (index.php) | 1988-03-10 |
Family
ID=11614985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP557480A Granted JPS56103444A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56103444A (index.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US4980311A (en) * | 1987-05-05 | 1990-12-25 | Seiko Epson Corporation | Method of fabricating a semiconductor device |
| US5385861A (en) * | 1994-03-15 | 1995-01-31 | National Semiconductor Corporation | Planarized trench and field oxide and poly isolation scheme |
-
1980
- 1980-01-21 JP JP557480A patent/JPS56103444A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56103444A (en) | 1981-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4330931A (en) | Process for forming metal plated regions and lines in MOS circuits | |
| US4459325A (en) | Semiconductor device and method for manufacturing the same | |
| EP0139371A1 (en) | Process for manufacturing a MOS integrated circuit employing a method of forming refractory metal silicide areas | |
| US4750971A (en) | Method of manufacturing a semiconductor device | |
| JPH0568854B2 (index.php) | ||
| US4532696A (en) | Method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate | |
| JPS622465B2 (index.php) | ||
| JPH06163532A (ja) | 半導体素子分離方法 | |
| US5149663A (en) | Method for manufacturing a Bi-CMOS semiconductor device | |
| US5115296A (en) | Preferential oxidization self-aligned contact technology | |
| JPH0324737A (ja) | 半導体装置およびその製造方法 | |
| JPS6310897B2 (index.php) | ||
| EP0233791A2 (en) | Insulated gate field effect transistor and method of manufacture thereof | |
| JPS6310896B2 (index.php) | ||
| JPH07297275A (ja) | 半導体装置の製造方法 | |
| JPS60241261A (ja) | 半導体装置およびその製造方法 | |
| JPH0779101B2 (ja) | 半導体装置の製法 | |
| JPS6154661A (ja) | 半導体装置の製造方法 | |
| JPH11186546A (ja) | 半導体装置及びその製造方法 | |
| JPS6092666A (ja) | Ｍｉｓトランジスタの製造方法 | |
| JPS628028B2 (index.php) | ||
| JPH0338742B2 (index.php) | ||
| JP2556155B2 (ja) | 半導体装置の製造方法 | |
| JPS59105367A (ja) | Ｍｏｓ型トランジスタの製造方法 | |
| JPS6129151B2 (index.php) |