JPS6310896B2 - - Google Patents

Info

Publication number
JPS6310896B2
JPS6310896B2 JP55005573A JP557380A JPS6310896B2 JP S6310896 B2 JPS6310896 B2 JP S6310896B2 JP 55005573 A JP55005573 A JP 55005573A JP 557380 A JP557380 A JP 557380A JP S6310896 B2 JPS6310896 B2 JP S6310896B2
Authority
JP
Japan
Prior art keywords
film
silicon
silicon dioxide
mask
dioxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55005573A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56103443A (en
Inventor
Toshuki Ishijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP557380A priority Critical patent/JPS56103443A/ja
Publication of JPS56103443A publication Critical patent/JPS56103443A/ja
Publication of JPS6310896B2 publication Critical patent/JPS6310896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP557380A 1980-01-21 1980-01-21 Production of element isolation structure for semiconductor device Granted JPS56103443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP557380A JPS56103443A (en) 1980-01-21 1980-01-21 Production of element isolation structure for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP557380A JPS56103443A (en) 1980-01-21 1980-01-21 Production of element isolation structure for semiconductor device

Publications (2)

Publication Number Publication Date
JPS56103443A JPS56103443A (en) 1981-08-18
JPS6310896B2 true JPS6310896B2 (index.php) 1988-03-10

Family

ID=11614956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP557380A Granted JPS56103443A (en) 1980-01-21 1980-01-21 Production of element isolation structure for semiconductor device

Country Status (1)

Country Link
JP (1) JPS56103443A (index.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873163A (ja) * 1981-10-27 1983-05-02 Toshiba Corp Ｍｏｓ型半導体装置
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
US4980311A (en) * 1987-05-05 1990-12-25 Seiko Epson Corporation Method of fabricating a semiconductor device
US4927780A (en) * 1989-10-02 1990-05-22 Motorola, Inc. Encapsulation method for localized oxidation of silicon
US6306726B1 (en) * 1999-08-30 2001-10-23 Micron Technology, Inc. Method of forming field oxide

Also Published As

Publication number Publication date
JPS56103443A (en) 1981-08-18

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