JPS56103443A - Production of element isolation structure for semiconductor device - Google Patents
Production of element isolation structure for semiconductor deviceInfo
- Publication number
- JPS56103443A JPS56103443A JP557380A JP557380A JPS56103443A JP S56103443 A JPS56103443 A JP S56103443A JP 557380 A JP557380 A JP 557380A JP 557380 A JP557380 A JP 557380A JP S56103443 A JPS56103443 A JP S56103443A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- layer
- sio2 film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 210000003323 beak Anatomy 0.000 abstract 1
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557380A JPS56103443A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP557380A JPS56103443A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56103443A true JPS56103443A (en) | 1981-08-18 |
| JPS6310896B2 JPS6310896B2 (enrdf_load_stackoverflow) | 1988-03-10 |
Family
ID=11614956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP557380A Granted JPS56103443A (en) | 1980-01-21 | 1980-01-21 | Production of element isolation structure for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56103443A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873163A (ja) * | 1981-10-27 | 1983-05-02 | Toshiba Corp | Ｍｏｓ型半導体装置 |
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US4927780A (en) * | 1989-10-02 | 1990-05-22 | Motorola, Inc. | Encapsulation method for localized oxidation of silicon |
| US4980311A (en) * | 1987-05-05 | 1990-12-25 | Seiko Epson Corporation | Method of fabricating a semiconductor device |
| US6306726B1 (en) * | 1999-08-30 | 2001-10-23 | Micron Technology, Inc. | Method of forming field oxide |
-
1980
- 1980-01-21 JP JP557380A patent/JPS56103443A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873163A (ja) * | 1981-10-27 | 1983-05-02 | Toshiba Corp | Ｍｏｓ型半導体装置 |
| US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
| US4980311A (en) * | 1987-05-05 | 1990-12-25 | Seiko Epson Corporation | Method of fabricating a semiconductor device |
| US4927780A (en) * | 1989-10-02 | 1990-05-22 | Motorola, Inc. | Encapsulation method for localized oxidation of silicon |
| US6306726B1 (en) * | 1999-08-30 | 2001-10-23 | Micron Technology, Inc. | Method of forming field oxide |
| US6326672B1 (en) | 1999-08-30 | 2001-12-04 | Micron Technology, Inc. | LOCOS fabrication processes and semiconductive material structures |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310896B2 (enrdf_load_stackoverflow) | 1988-03-10 |
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