JPS5754342A - Handotaisochinoseizohoho - Google Patents

Handotaisochinoseizohoho

Info

Publication number
JPS5754342A
JPS5754342A JP13048280A JP13048280A JPS5754342A JP S5754342 A JPS5754342 A JP S5754342A JP 13048280 A JP13048280 A JP 13048280A JP 13048280 A JP13048280 A JP 13048280A JP S5754342 A JPS5754342 A JP S5754342A
Authority
JP
Japan
Prior art keywords
film
silicon layer
oxide films
si3n4
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13048280A
Other languages
English (en)
Other versions
JPS6152980B2 (ja
Inventor
Shinji Taguchi
Kazuya Shibazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13048280A priority Critical patent/JPS5754342A/ja
Publication of JPS5754342A publication Critical patent/JPS5754342A/ja
Publication of JPS6152980B2 publication Critical patent/JPS6152980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP13048280A 1980-09-19 1980-09-19 Handotaisochinoseizohoho Granted JPS5754342A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13048280A JPS5754342A (ja) 1980-09-19 1980-09-19 Handotaisochinoseizohoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13048280A JPS5754342A (ja) 1980-09-19 1980-09-19 Handotaisochinoseizohoho

Publications (2)

Publication Number Publication Date
JPS5754342A true JPS5754342A (ja) 1982-03-31
JPS6152980B2 JPS6152980B2 (ja) 1986-11-15

Family

ID=15035303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13048280A Granted JPS5754342A (ja) 1980-09-19 1980-09-19 Handotaisochinoseizohoho

Country Status (1)

Country Link
JP (1) JPS5754342A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175842A (ja) * 1982-04-08 1983-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP0764980A1 (en) * 1995-09-20 1997-03-26 Lucent Technologies Inc. Improved local oxidation of silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175842A (ja) * 1982-04-08 1983-10-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP0764980A1 (en) * 1995-09-20 1997-03-26 Lucent Technologies Inc. Improved local oxidation of silicon

Also Published As

Publication number Publication date
JPS6152980B2 (ja) 1986-11-15

Similar Documents

Publication Publication Date Title
JPS5599744A (en) Manufacture of semiconductor device
JPS5754342A (ja) Handotaisochinoseizohoho
JPS56103443A (en) Production of element isolation structure for semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS54109783A (en) Manufacture of semiconductor device
JPS54130883A (en) Production of semiconductor device
JPS55105364A (en) Semiconductor memory and its manufacture
JPS6461928A (en) Manufacture of semiconductor device
JPS5754343A (ja) Hantenboshiryoikinokeiseihoho
JPS6430244A (en) Manufacture of semiconductor device
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS56126957A (en) Manufacture of semiconductor device
JPS5559778A (en) Method of fabricating semiconductor device
JPS56164550A (en) Manufacture of semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS55102272A (en) Method of fabricating mos semiconductor device
JPS6430264A (en) Manufacture of semiconductor device
JPS5779641A (en) Manufacture of semiconductor device
JPS57199234A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5519831A (en) Semiconductor device manufacturing method
JPS5740953A (en) Manufacture of semiconductor device
JPS57196578A (en) Manufacture of semiconductor device
JPS57184248A (en) Manufacture of semiconductor device
JPS6484662A (en) Manufacture of semiconductor device
JPS5793575A (en) Semiconductor integrated circuit