JPS5754342A - Handotaisochinoseizohoho - Google Patents
HandotaisochinoseizohohoInfo
- Publication number
- JPS5754342A JPS5754342A JP13048280A JP13048280A JPS5754342A JP S5754342 A JPS5754342 A JP S5754342A JP 13048280 A JP13048280 A JP 13048280A JP 13048280 A JP13048280 A JP 13048280A JP S5754342 A JPS5754342 A JP S5754342A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon layer
- oxide films
- si3n4
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13048280A JPS5754342A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13048280A JPS5754342A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5754342A true JPS5754342A (ja) | 1982-03-31 |
JPS6152980B2 JPS6152980B2 (ja) | 1986-11-15 |
Family
ID=15035303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13048280A Granted JPS5754342A (ja) | 1980-09-19 | 1980-09-19 | Handotaisochinoseizohoho |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5754342A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175842A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
EP0764980A1 (en) * | 1995-09-20 | 1997-03-26 | Lucent Technologies Inc. | Improved local oxidation of silicon |
-
1980
- 1980-09-19 JP JP13048280A patent/JPS5754342A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175842A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
EP0764980A1 (en) * | 1995-09-20 | 1997-03-26 | Lucent Technologies Inc. | Improved local oxidation of silicon |
Also Published As
Publication number | Publication date |
---|---|
JPS6152980B2 (ja) | 1986-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5599744A (en) | Manufacture of semiconductor device | |
JPS5754342A (ja) | Handotaisochinoseizohoho | |
JPS56103443A (en) | Production of element isolation structure for semiconductor device | |
JPS5575238A (en) | Method of fabricating semiconductor device | |
JPS54109783A (en) | Manufacture of semiconductor device | |
JPS54130883A (en) | Production of semiconductor device | |
JPS55105364A (en) | Semiconductor memory and its manufacture | |
JPS6461928A (en) | Manufacture of semiconductor device | |
JPS5754343A (ja) | Hantenboshiryoikinokeiseihoho | |
JPS6430244A (en) | Manufacture of semiconductor device | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS56126957A (en) | Manufacture of semiconductor device | |
JPS5559778A (en) | Method of fabricating semiconductor device | |
JPS56164550A (en) | Manufacture of semiconductor device | |
JPS5739579A (en) | Mos semiconductor device and manufacture thereof | |
JPS55102272A (en) | Method of fabricating mos semiconductor device | |
JPS6430264A (en) | Manufacture of semiconductor device | |
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS57199234A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS5519831A (en) | Semiconductor device manufacturing method | |
JPS5740953A (en) | Manufacture of semiconductor device | |
JPS57196578A (en) | Manufacture of semiconductor device | |
JPS57184248A (en) | Manufacture of semiconductor device | |
JPS6484662A (en) | Manufacture of semiconductor device | |
JPS5793575A (en) | Semiconductor integrated circuit |