JPS5754343A - Hantenboshiryoikinokeiseihoho - Google Patents

Hantenboshiryoikinokeiseihoho

Info

Publication number
JPS5754343A
JPS5754343A JP13093280A JP13093280A JPS5754343A JP S5754343 A JPS5754343 A JP S5754343A JP 13093280 A JP13093280 A JP 13093280A JP 13093280 A JP13093280 A JP 13093280A JP S5754343 A JPS5754343 A JP S5754343A
Authority
JP
Japan
Prior art keywords
coat
region
breadth
inversion
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13093280A
Other languages
English (en)
Inventor
Takeya Ezaki
Masabumi Kubota
Osamu Ishikawa
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13093280A priority Critical patent/JPS5754343A/ja
Publication of JPS5754343A publication Critical patent/JPS5754343A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP13093280A 1980-09-19 1980-09-19 Hantenboshiryoikinokeiseihoho Pending JPS5754343A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13093280A JPS5754343A (ja) 1980-09-19 1980-09-19 Hantenboshiryoikinokeiseihoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13093280A JPS5754343A (ja) 1980-09-19 1980-09-19 Hantenboshiryoikinokeiseihoho

Publications (1)

Publication Number Publication Date
JPS5754343A true JPS5754343A (ja) 1982-03-31

Family

ID=15046073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13093280A Pending JPS5754343A (ja) 1980-09-19 1980-09-19 Hantenboshiryoikinokeiseihoho

Country Status (1)

Country Link
JP (1) JPS5754343A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226942A (ja) * 1985-04-01 1986-10-08 Matsushita Electronics Corp 半導体集積回路の素子間分離方法
JPH07183371A (ja) * 1993-12-24 1995-07-21 Nec Corp 半導体装置の製造方法
JPH07297275A (ja) * 1994-04-20 1995-11-10 Nec Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226942A (ja) * 1985-04-01 1986-10-08 Matsushita Electronics Corp 半導体集積回路の素子間分離方法
JPH07183371A (ja) * 1993-12-24 1995-07-21 Nec Corp 半導体装置の製造方法
JPH07297275A (ja) * 1994-04-20 1995-11-10 Nec Corp 半導体装置の製造方法
US5482889A (en) * 1994-04-20 1996-01-09 Nec Corporation Method for producing of semiconductor device having of channel stopper under field insulating layer

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