JPS56100480A - Electric field effect transistor - Google Patents

Electric field effect transistor

Info

Publication number
JPS56100480A
JPS56100480A JP235480A JP235480A JPS56100480A JP S56100480 A JPS56100480 A JP S56100480A JP 235480 A JP235480 A JP 235480A JP 235480 A JP235480 A JP 235480A JP S56100480 A JPS56100480 A JP S56100480A
Authority
JP
Japan
Prior art keywords
layer
electrodes
gaas
fet
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP235480A
Other languages
English (en)
Inventor
Hideaki Kozu
Masahide Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP235480A priority Critical patent/JPS56100480A/ja
Publication of JPS56100480A publication Critical patent/JPS56100480A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP235480A 1980-01-11 1980-01-11 Electric field effect transistor Pending JPS56100480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP235480A JPS56100480A (en) 1980-01-11 1980-01-11 Electric field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP235480A JPS56100480A (en) 1980-01-11 1980-01-11 Electric field effect transistor

Publications (1)

Publication Number Publication Date
JPS56100480A true JPS56100480A (en) 1981-08-12

Family

ID=11526929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP235480A Pending JPS56100480A (en) 1980-01-11 1980-01-11 Electric field effect transistor

Country Status (1)

Country Link
JP (1) JPS56100480A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120073A (ja) * 1987-11-02 1989-05-12 Nec Corp Ｍｅｓトランジスタ
JPH01125870A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 砒化ガリウムショットキ障壁型半導体装置
US4951121A (en) * 1984-11-14 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor device with a 3-ply gate electrode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS493237A (ja) * 1972-04-22 1974-01-12
JPS4996672A (ja) * 1973-01-16 1974-09-12
JPS5197383A (ja) * 1975-02-21 1976-08-26
JPS5197984A (en) * 1975-02-26 1976-08-28 Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS493237A (ja) * 1972-04-22 1974-01-12
JPS4996672A (ja) * 1973-01-16 1974-09-12
JPS5197383A (ja) * 1975-02-21 1976-08-26
JPS5197984A (en) * 1975-02-26 1976-08-28 Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951121A (en) * 1984-11-14 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor device with a 3-ply gate electrode
JPH01120073A (ja) * 1987-11-02 1989-05-12 Nec Corp Ｍｅｓトランジスタ
JPH01125870A (ja) * 1987-11-10 1989-05-18 Matsushita Electric Ind Co Ltd 砒化ガリウムショットキ障壁型半導体装置

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