JPS5591857A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591857A
JPS5591857A JP16478978A JP16478978A JPS5591857A JP S5591857 A JPS5591857 A JP S5591857A JP 16478978 A JP16478978 A JP 16478978A JP 16478978 A JP16478978 A JP 16478978A JP S5591857 A JPS5591857 A JP S5591857A
Authority
JP
Japan
Prior art keywords
region
window
electrode
electrode window
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16478978A
Other languages
English (en)
Other versions
JPS5939901B2 (ja
Inventor
Tsuneo Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16478978A priority Critical patent/JPS5939901B2/ja
Publication of JPS5591857A publication Critical patent/JPS5591857A/ja
Publication of JPS5939901B2 publication Critical patent/JPS5939901B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
JP16478978A 1978-12-28 1978-12-28 半導体装置の製造方法 Expired JPS5939901B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16478978A JPS5939901B2 (ja) 1978-12-28 1978-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16478978A JPS5939901B2 (ja) 1978-12-28 1978-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5591857A true JPS5591857A (en) 1980-07-11
JPS5939901B2 JPS5939901B2 (ja) 1984-09-27

Family

ID=15799963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16478978A Expired JPS5939901B2 (ja) 1978-12-28 1978-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5939901B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPS59138363A (ja) * 1983-01-28 1984-08-08 Hitachi Ltd 半導体装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222556A (ja) * 1982-06-21 1983-12-24 Hitachi Ltd 半導体装置の製造方法
JPH0481336B2 (ja) * 1982-06-21 1992-12-22 Hitachi Ltd
JPS59138363A (ja) * 1983-01-28 1984-08-08 Hitachi Ltd 半導体装置及びその製造方法
JPH0517701B2 (ja) * 1983-01-28 1993-03-09 Hitachi Ltd

Also Published As

Publication number Publication date
JPS5939901B2 (ja) 1984-09-27

Similar Documents

Publication Publication Date Title
JPS5775453A (en) Semiconductor device and manufacture thereof
JPS5591857A (en) Manufacture of semiconductor device
JPS5633881A (en) Manufacture of semiconductor device
JPS5591858A (en) Manufacture of semiconductor device
JPS57155777A (en) Mos transistor
JPS5582461A (en) Semiconductor integrated circuit device
JPS54101290A (en) Semiconductor integtated circuit unit and its manufacture
JPS56130970A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5456381A (en) Production of semiconductor device
JPS5235584A (en) Manufacturing process of semiconductor device
JPS5654062A (en) Production of semiconductor device
JPS5793562A (en) Semiconductor device
JPS561567A (en) Manufacture of semiconductor device
JPS57132357A (en) Manufacture of semiconductor element
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS57147267A (en) Manufacture of semiconductor integrated circuit device
JPS5753958A (ja) Handotaisochi
JPS5466786A (en) Semiconductor integaated circuit device
JPS54113269A (en) Production of junction-type electronic field effect transistor
JPS5599778A (en) Insulated-gate type field effect transistor
JPS6477955A (en) Manufacture of semiconductor device
JPS5654063A (en) Semiconductor device
JPH0369157A (ja) 半導体装置の製造方法
JPS6442852A (en) Semiconductor device and manufacture thereof