JPS5587429A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5587429A
JPS5587429A JP16315778A JP16315778A JPS5587429A JP S5587429 A JPS5587429 A JP S5587429A JP 16315778 A JP16315778 A JP 16315778A JP 16315778 A JP16315778 A JP 16315778A JP S5587429 A JPS5587429 A JP S5587429A
Authority
JP
Japan
Prior art keywords
layer
injecting
ions
substrate
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16315778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142854B2 (enrdf_load_html_response
Inventor
Shigeru Tatsuta
Teruo Sakurai
Toshio Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16315778A priority Critical patent/JPS5587429A/ja
Publication of JPS5587429A publication Critical patent/JPS5587429A/ja
Publication of JPS6142854B2 publication Critical patent/JPS6142854B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
JP16315778A 1978-12-26 1978-12-26 Manufacture of semiconductor device Granted JPS5587429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16315778A JPS5587429A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16315778A JPS5587429A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5587429A true JPS5587429A (en) 1980-07-02
JPS6142854B2 JPS6142854B2 (enrdf_load_html_response) 1986-09-24

Family

ID=15768304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16315778A Granted JPS5587429A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587429A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 半導体装置の製造方法
JPS6095921A (ja) * 1983-10-31 1985-05-29 Toshiba Corp 半導体装置の製造方法
JPS61142738A (ja) * 1984-12-17 1986-06-30 Toshiba Corp 単結晶基体へのイオン注入方法
JPH0235715A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH02306622A (ja) * 1989-05-22 1990-12-20 Oki Electric Ind Co Ltd 半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0217856U (enrdf_load_html_response) * 1988-07-22 1990-02-06

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 半導体装置の製造方法
JPS6095921A (ja) * 1983-10-31 1985-05-29 Toshiba Corp 半導体装置の製造方法
JPS61142738A (ja) * 1984-12-17 1986-06-30 Toshiba Corp 単結晶基体へのイオン注入方法
JPH0235715A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH02306622A (ja) * 1989-05-22 1990-12-20 Oki Electric Ind Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6142854B2 (enrdf_load_html_response) 1986-09-24

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