JPS5586164A - Manufacture of crossover gate type field-effect transistor - Google Patents

Manufacture of crossover gate type field-effect transistor

Info

Publication number
JPS5586164A
JPS5586164A JP16164578A JP16164578A JPS5586164A JP S5586164 A JPS5586164 A JP S5586164A JP 16164578 A JP16164578 A JP 16164578A JP 16164578 A JP16164578 A JP 16164578A JP S5586164 A JPS5586164 A JP S5586164A
Authority
JP
Japan
Prior art keywords
film
sio
region
thick
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16164578A
Other languages
English (en)
Inventor
Yasuo Nemoto
Kiyobumi Oota
Akira Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16164578A priority Critical patent/JPS5586164A/ja
Publication of JPS5586164A publication Critical patent/JPS5586164A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP16164578A 1978-12-23 1978-12-23 Manufacture of crossover gate type field-effect transistor Pending JPS5586164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16164578A JPS5586164A (en) 1978-12-23 1978-12-23 Manufacture of crossover gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16164578A JPS5586164A (en) 1978-12-23 1978-12-23 Manufacture of crossover gate type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5586164A true JPS5586164A (en) 1980-06-28

Family

ID=15739112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16164578A Pending JPS5586164A (en) 1978-12-23 1978-12-23 Manufacture of crossover gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5586164A (ja)

Similar Documents

Publication Publication Date Title
US4782031A (en) Method of making GaAs MOSFET with low source resistance yet having satisfactory leakage current by ion-implantation
JPS54158880A (en) Compound semiconductor device and its manufacture
JPS5519881A (en) Fieldeffect transistor
JPS5586164A (en) Manufacture of crossover gate type field-effect transistor
JPS5627972A (en) Manufacture of compound semiconductor device
JPS56111264A (en) Manufacture of semiconductor device
JPS56126977A (en) Junction type field effect transistor
JPS5676571A (en) Mos field effect transistor and manufacture thereof
JPS6489468A (en) Semiconductor device
JPS57193068A (en) Semiconductor device
JPS5591183A (en) Manufacture of semiconductor device
JPS6482676A (en) Iii-v compound semiconductor field-effect transistor and manufacture thereof
JPS5591833A (en) Method of forming submicron pattern
JPS6439065A (en) Thin film field-effect transistor
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS5737882A (en) Compound semiconductor device and production thereof
JPS57154877A (en) Schottky barrier gate type field effect transistor
JPS54134988A (en) Field effect transistor of schottky barrier gate type
JPS5627975A (en) Manufacture of compound semiconductor device
JPS54108584A (en) Manufacture of field effect transistor
JPS6461065A (en) Field-effect transistor and manufacture thereof
JPS5627974A (en) Manufacture of compound semiconductor device
JPS57207348A (en) Manufacture of semiconductor device
JPS54143077A (en) Manufacture of semiconductor device
JPS54146974A (en) Production of schottky field effect transistor