JPS5575999A - Vapor phase crystal growing method - Google Patents

Vapor phase crystal growing method

Info

Publication number
JPS5575999A
JPS5575999A JP14998078A JP14998078A JPS5575999A JP S5575999 A JPS5575999 A JP S5575999A JP 14998078 A JP14998078 A JP 14998078A JP 14998078 A JP14998078 A JP 14998078A JP S5575999 A JPS5575999 A JP S5575999A
Authority
JP
Japan
Prior art keywords
vapor phase
feed gas
gas
growing speed
supplementally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14998078A
Other languages
Japanese (ja)
Inventor
Takashi Aoyama
Takaya Suzuki
Hironori Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14998078A priority Critical patent/JPS5575999A/en
Publication of JPS5575999A publication Critical patent/JPS5575999A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To increase the amt. of wafers treated per batch by analyzing reaction gas at a plurality of predetermined positions in a reaction container to calculate a concn. gradient in a direction perpendicular to the substrate surfaces and supplementally introducing the gas so that growing speed is made uniform.
CONSTITUTION: A plurality of substrate waters 3 are mounted on heating jig 2 in reaction furnace 1 provided with high frequency heating coils 7, and semiconductor feed gas is supplied from pipe 5 to perform vapor phase growth on substrates 3 at a predetermined temp. At this time, two sampling capillaries 8A, 8B are set at positions 4mm and 9mm above the substrate surfaces and connected to mass spectrometers 9A, 9B to measure a feed gas concn. gradient. According to the temp. and the measured results, the monitored value of growing speed is fed back to flow rate regulation meter 12 through computer 11 to supplementally introduce the feed gas from nozzle 13 so that the vapor phase growing speed is made uniform. Thus, furnace 1 can be lengthened to increase the amt. of wafers treated per batch.
COPYRIGHT: (C)1980,JPO&Japio
JP14998078A 1978-12-06 1978-12-06 Vapor phase crystal growing method Pending JPS5575999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14998078A JPS5575999A (en) 1978-12-06 1978-12-06 Vapor phase crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14998078A JPS5575999A (en) 1978-12-06 1978-12-06 Vapor phase crystal growing method

Publications (1)

Publication Number Publication Date
JPS5575999A true JPS5575999A (en) 1980-06-07

Family

ID=15486827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14998078A Pending JPS5575999A (en) 1978-12-06 1978-12-06 Vapor phase crystal growing method

Country Status (1)

Country Link
JP (1) JPS5575999A (en)

Similar Documents

Publication Publication Date Title
JPS55158623A (en) Method of controlling semiconductor vapor phase growth
JPS5578524A (en) Manufacture of semiconductor device
US3682699A (en) Method of vapor growth of a semiconductor crystal
JPS5748226A (en) Plasma processing method and device for the same
JPS5575999A (en) Vapor phase crystal growing method
JPS5678497A (en) Vapor growth apparatus
JPS54144867A (en) Gas phase growth method of semiconductor
JPS5542231A (en) Reduced pressure vapor phase growing device
JPS5713746A (en) Vapor-phase growing apparatus
JPS56100125A (en) Manufacture of silicon carbide whisker
JPS55164072A (en) Coating
JPS56100115A (en) Manufacture of silicon nitride whisker
GB1378302A (en) Production of semiconductor rods
JPS55128819A (en) Method of growing semiconductor at gas phase
JPS5542230A (en) Vapor phase growing device
JPS5788099A (en) Vapor phase growing method for compound semiconductor
JPS5674922A (en) Method of vapor growth
JPS5493357A (en) Growing method of polycrystal silicon
JPS54137973A (en) Formation method of plasma nitride
JPS5560099A (en) Vapor phase growing device
JPS6425518A (en) Method for forming amorphous silicon film
JPS6120316A (en) Bubbling device
JPS54123599A (en) Forming method for silicon nitride film
JPS5586112A (en) Vapor phase growth method for 3-5 group compound semiconductor
JPS63174311A (en) Cvd apparatus