JPS5575999A - Vapor phase crystal growing method - Google Patents
Vapor phase crystal growing methodInfo
- Publication number
- JPS5575999A JPS5575999A JP14998078A JP14998078A JPS5575999A JP S5575999 A JPS5575999 A JP S5575999A JP 14998078 A JP14998078 A JP 14998078A JP 14998078 A JP14998078 A JP 14998078A JP S5575999 A JPS5575999 A JP S5575999A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- feed gas
- gas
- growing speed
- supplementally
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To increase the amt. of wafers treated per batch by analyzing reaction gas at a plurality of predetermined positions in a reaction container to calculate a concn. gradient in a direction perpendicular to the substrate surfaces and supplementally introducing the gas so that growing speed is made uniform.
CONSTITUTION: A plurality of substrate waters 3 are mounted on heating jig 2 in reaction furnace 1 provided with high frequency heating coils 7, and semiconductor feed gas is supplied from pipe 5 to perform vapor phase growth on substrates 3 at a predetermined temp. At this time, two sampling capillaries 8A, 8B are set at positions 4mm and 9mm above the substrate surfaces and connected to mass spectrometers 9A, 9B to measure a feed gas concn. gradient. According to the temp. and the measured results, the monitored value of growing speed is fed back to flow rate regulation meter 12 through computer 11 to supplementally introduce the feed gas from nozzle 13 so that the vapor phase growing speed is made uniform. Thus, furnace 1 can be lengthened to increase the amt. of wafers treated per batch.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14998078A JPS5575999A (en) | 1978-12-06 | 1978-12-06 | Vapor phase crystal growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14998078A JPS5575999A (en) | 1978-12-06 | 1978-12-06 | Vapor phase crystal growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5575999A true JPS5575999A (en) | 1980-06-07 |
Family
ID=15486827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14998078A Pending JPS5575999A (en) | 1978-12-06 | 1978-12-06 | Vapor phase crystal growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575999A (en) |
-
1978
- 1978-12-06 JP JP14998078A patent/JPS5575999A/en active Pending
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