JPS55128819A - Method of growing semiconductor at gas phase - Google Patents

Method of growing semiconductor at gas phase

Info

Publication number
JPS55128819A
JPS55128819A JP3622579A JP3622579A JPS55128819A JP S55128819 A JPS55128819 A JP S55128819A JP 3622579 A JP3622579 A JP 3622579A JP 3622579 A JP3622579 A JP 3622579A JP S55128819 A JPS55128819 A JP S55128819A
Authority
JP
Japan
Prior art keywords
vessel
gas
flow
protruded
picking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3622579A
Other languages
Japanese (ja)
Other versions
JPS5826822B2 (en
Inventor
Hironori Inoue
Takashi Aoyama
Takaya Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3622579A priority Critical patent/JPS5826822B2/en
Publication of JPS55128819A publication Critical patent/JPS55128819A/en
Publication of JPS5826822B2 publication Critical patent/JPS5826822B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To produce a thin film of high uniformity, by protruding an extraction nozzle into the downstream part of a reaction vessel, picking up some of in-furnace gas to analyze the gas concentration and supplementing new material gas, depending on the picking-up, through a feed nozzle protruded into the central part of the vessel in the opposite direction to the flow of the gas in the vessel.
CONSTITUTION: A rest 2, on which numerous substrate wafers 3 are placed, is housed in a reaction vessel 1 so that the rest 2 extends obliquely in the longitudinal direction of the vessel 1. A high-frequency heating coil 7 is provided around the vessel 1. Prescribed gas is caused to flow into the vessel 1 from a feeder 4. A semiconductor gas phase growing device is thus constructed. An extraction nozzle 9 is protruded into the downstream part of the vessel 1 to pick up some of the furnace gas and analyze its concentration by an infrared analyzer. A flow rate regulator 10 is controlled depending on the analyzed value. New supplementary gas of SiCl4 and H2 from the feeder is injected in the opposite direction to the main gas flow through a feed nozzle 11 protruded into the central part of the vessel 1.
COPYRIGHT: (C)1980,JPO&Japio
JP3622579A 1979-03-29 1979-03-29 Semiconductor vapor phase growth method Expired JPS5826822B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3622579A JPS5826822B2 (en) 1979-03-29 1979-03-29 Semiconductor vapor phase growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3622579A JPS5826822B2 (en) 1979-03-29 1979-03-29 Semiconductor vapor phase growth method

Publications (2)

Publication Number Publication Date
JPS55128819A true JPS55128819A (en) 1980-10-06
JPS5826822B2 JPS5826822B2 (en) 1983-06-06

Family

ID=12463829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3622579A Expired JPS5826822B2 (en) 1979-03-29 1979-03-29 Semiconductor vapor phase growth method

Country Status (1)

Country Link
JP (1) JPS5826822B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58189122A (en) * 1982-04-30 1983-11-04 Kaken Pharmaceut Co Ltd Preventing agent and remedy for disease

Also Published As

Publication number Publication date
JPS5826822B2 (en) 1983-06-06

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