JPS6120316A - Bubbling device - Google Patents
Bubbling deviceInfo
- Publication number
- JPS6120316A JPS6120316A JP14071484A JP14071484A JPS6120316A JP S6120316 A JPS6120316 A JP S6120316A JP 14071484 A JP14071484 A JP 14071484A JP 14071484 A JP14071484 A JP 14071484A JP S6120316 A JPS6120316 A JP S6120316A
- Authority
- JP
- Japan
- Prior art keywords
- bubbler
- gas
- temperature
- constant
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 乙の発明は、バブリング装置に関するものである。[Detailed description of the invention] [Industrial application field] B's invention relates to a bubbling device.
この種の従来技術を説明する。 This type of conventional technology will be explained.
半導体製造の気相成長工程等において、反応ゾーンへの
液体又は固体の原料（有機金属）の供給は該原料をバブ
リング装置にて気化状態にしたうえで行われる。In a vapor phase growth process of semiconductor manufacturing, etc., a liquid or solid raw material (organic metal) is supplied to a reaction zone after the raw material is vaporized using a bubbling device.
このバブリング装置の一構成例を第２図に示す。An example of the configuration of this bubbling device is shown in FIG. 2.
恒温槽１の内部にはバブラ２が設置されており、前記恒
温槽１の内部の熱媒介流動体３を介して、前記バブラ２
の温度を一定に保っている。A bubbler 2 is installed inside the constant temperature bath 1, and the bubbler 2 is
keeps the temperature constant.
前記バブラ２は内部に原料６（乙の例では液体）が注入
されるものである。また、前記バブラ２の上部にて貫通
し下部に至るまで延出したガス導入管４が連結されてい
ると共に、前記バブラ２の上部にて貫通・延出したガス
導出管５が連結されている。The bubbler 2 is a device into which a raw material 6 (liquid in example B) is injected. Further, a gas introduction pipe 4 that penetrates the upper part of the bubbler 2 and extends to the lower part thereof is connected to the bubbler 2, and a gas outlet pipe 5 that penetrates and extends to the upper part of the bubbler 2 is connected to the bubbler 2. .
この装置の動作を同じ（第２図を用いて説明する。The operation of this device will be explained using the same method (FIG. 2).
ガス導入管４によりバブリングガスをバブラ２の内部に
導入する。前記ガス導入管４は前記バブラ２の下部まで
延出しているので、その端口は原料６に浸ることとなる
。したがって、乙のガス導入管４より導入されたバブリ
ングガス（水素、窒素又はアルゴン等）は前記原料６に
浸った前記端口より噴出して前記バブラ２の上部に溜ま
ることとなる。Bubbling gas is introduced into the bubbler 2 through the gas introduction pipe 4. Since the gas introduction pipe 4 extends to the bottom of the bubbler 2, its end is immersed in the raw material 6. Therefore, the bubbling gas (hydrogen, nitrogen, argon, etc.) introduced from the gas introduction pipe 4 is ejected from the end immersed in the raw material 6 and accumulates in the upper part of the bubbler 2.
この上部に溜まったガスは、蒸気圧により気化した前記
原料６を含有することなり、ガス導出管５により反応ゾ
ーン（図示せず）へ供給されろ。The gas collected in the upper part contains the raw material 6 vaporized by the vapor pressure, and is supplied to the reaction zone (not shown) through the gas outlet pipe 5.
前記蒸気圧を一定に保つために、前記バブル２の内部温
度は一定に保つ必要があり、このため前記バブラ２は前
記恒温槽１の内部に設置されているものである。In order to keep the vapor pressure constant, it is necessary to keep the internal temperature of the bubble 2 constant, and for this reason, the bubbler 2 is installed inside the constant temperature bath 1.
しかしながら、上記の構成例において、バブリングガス
は室温程度であり恒温槽１の内部温度と異なるので、前
記バブリングガスをバブル２の内部に導入するとバブル
２の内部温度が設定されたｓ度ｉ異なってくる。これに
従って原料６の蒸気圧の値が変化し、ガス導出管５によ
り反応リーン・＼導出されるガス中の前記原料６の含有
率か変化するので、単位時間当たりの原料供給量が変化
してしまうという問題があった。However, in the above configuration example, since the bubbling gas is at about room temperature and different from the internal temperature of the constant temperature chamber 1, when the bubbling gas is introduced into the inside of the bubble 2, the internal temperature of the bubble 2 differs by a set degree i. come. Accordingly, the value of the vapor pressure of the raw material 6 changes, and the content rate of the raw material 6 in the reaction lean gas discharged by the gas outlet pipe 5 changes, so the amount of raw material supplied per unit time changes. There was a problem with putting it away.
またこのため、気相成長工程等におけろ正確な条件の把
握及びその再現性を損なうという問題があった。Moreover, this also poses a problem in that accurate grasping of conditions and reproducibility thereof are impaired in the vapor phase growth process and the like.
この発明は、上記問題点を解決するため、バブラと、該
バブラにガスを流通させるガス導入管及びガス導出管と
、前記バブラの温度を一定に保つ恒温槽とからなるバブ
リング装置において、前記ガス導入管に温度制御部を設
けたものである。In order to solve the above-mentioned problems, the present invention provides a bubbling device that includes a bubbler, a gas introduction pipe and a gas outlet pipe that flow gas through the bubbler, and a constant temperature bath that keeps the temperature of the bubbler constant. A temperature control section is provided in the introduction pipe.
この発明は、ガス導入管に温度制御部を設けているので
、外部よりガスをバブラの内部に導入する際、前記ガス
の温度が前記恒温槽の内部温度と異なっているときでも
、前記ガスが前記温度制御部内を通る間に、該温度制御
部により前記恒温槽の内部温度にほぼ等しい温度に制御
される。このため、前記バブラの内部温度は常にほぼ一
定となるので、前記バブラの内部に入れられた原料の蒸
気圧は設定された一定の値をとり、ガス導出管を通って
反応ゾーンへ輸送されるガスの原料含有率は設定された
通りの値となる。しｔこがって、前記反応ゾーンへの原
料の供給は、その供給量を正確に行えることになる。In this invention, since the gas introduction pipe is provided with a temperature control section, when the gas is introduced into the bubbler from the outside, even when the temperature of the gas is different from the internal temperature of the thermostatic chamber, the gas is While passing through the temperature control section, the temperature is controlled by the temperature control section to be approximately equal to the internal temperature of the thermostatic oven. For this reason, the internal temperature of the bubbler is always approximately constant, so the vapor pressure of the raw material placed inside the bubbler takes a constant value, and is transported to the reaction zone through the gas outlet pipe. The raw material content of the gas becomes the set value. Therefore, the raw material can be supplied to the reaction zone in an accurate amount.
この発明の一実施例を第１図に示す。 An embodiment of this invention is shown in FIG.
図に示すように、恒温槽１の内部にはバブラ２が投首さ
れており、前記恒温槽１の内部の熱媒介流動体３を介し
て、前記バブラ２の温度を一定に保っている。As shown in the figure, a bubbler 2 is hung inside the constant temperature bath 1, and the temperature of the bubbler 2 is kept constant via a heat transfer fluid 3 inside the constant temperature bath 1.
前記バブラ２は内部に原料（図示せず）が注入されるも
のである。また、前記バブラ２の上部にて貫通し下部に
至るまで延出したガス導入管７が連結されていると共に
、前記バブラ２の上部にて貫通・延出したガス導出管５
が連結されているのは第２図に示した構成例と同様であ
る。前記ガス導入ｉ７には、前記恒温槽１の内面と前記
バブラ２との岡に位置するように該バブラ２の外周を周
回するよう設けられた部位８が形成されている。The bubbler 2 is one into which a raw material (not shown) is injected. Further, a gas introduction pipe 7 which penetrates the upper part of the bubbler 2 and extends to the lower part thereof is connected thereto, and a gas outlet pipe 5 which penetrates and extends from the upper part of the bubbler 2.
are connected in the same way as in the configuration example shown in FIG. A portion 8 is formed in the gas introduction i7 so as to be located between the inner surface of the thermostatic chamber 1 and the bubbler 2 and to go around the outer periphery of the bubbler 2.
この実施例の動作を同じく第１図を用いて説明する。The operation of this embodiment will be explained using FIG. 1 as well.
ガス導入管７によりバブリングガスをバブラ２の内部に
導入する。前記ガス導入管７は前記バブラ２の下部まで
延出しているので、その端口は原料に浸ることとなる。Bubbling gas is introduced into the bubbler 2 through the gas introduction pipe 7. Since the gas introduction pipe 7 extends to the bottom of the bubbler 2, its end is immersed in the raw material.
したがって、このガス導入管７より導入されたバブリン
グガスは前記原料に浸った前記端口より噴出して前記バ
ブラ２の上部に溜まることとなる。この上部に溜まった
ガスは、蒸気圧により気化しｔこ前記原料を含有するこ
となり、ガス導出管５により反応ゾーン（図示せず）へ
供給される。前記蒸気圧を一定に保つために、前記原料
の温度は一定に保つ必要があり、このため前記バブラ２
は前記恒温槽１の内部に設置されているものである。以
上は第２図に示す構成例と同様である。Therefore, the bubbling gas introduced through the gas introduction pipe 7 is ejected from the end immersed in the raw material and accumulates in the upper part of the bubbler 2. The gas accumulated in the upper part is vaporized by the vapor pressure and contains the raw material, and is supplied to the reaction zone (not shown) through the gas outlet pipe 5. In order to keep the vapor pressure constant, it is necessary to keep the temperature of the raw material constant, and for this reason, the bubbler 2
is installed inside the constant temperature bath 1. The above is the same as the configuration example shown in FIG.
前記ガス導入管７を通って前記バブラ２の内部に導入さ
れる前記バブリングガスの温度は、前記ガス導入管７の
温度制御部（前記恒温槽］の内部に位置する部位）８を
通る間に、前記恒温槽１の内部温度とほぼ同じになる。The temperature of the bubbling gas introduced into the bubbler 2 through the gas introduction pipe 7 varies while passing through the temperature control section 8 of the gas introduction pipe 7 (a section located inside the constant temperature oven). , becomes almost the same as the internal temperature of the thermostatic oven 1.
乙のｔこめ、前記バブラ２の内部温度は常にほぼ一定と
なるのて、前記バブラ２の内部に入れられた原料の蒸気
圧は設定された一定の値をとり、前記ガス導出管５を通
−）で前記反応ゾーンへ輸送されるガスの原料含有率は
設定された通りの値となる。したか−）で、前記反応ゾ
ーンへの原料の供給は、その供給量を正確に行えること
になる。Since the internal temperature of the bubbler 2 is always almost constant, the vapor pressure of the raw material put into the bubbler 2 takes a preset constant value, and the gas is passed through the gas outlet pipe 5. -), the raw material content of the gas transported to the reaction zone becomes the set value. In this way, the raw material can be supplied to the reaction zone in an accurate amount.
以上説明したように、この発明は、ガス導入管に、温度
制御部を設けているのて、前記ガス導入管を通って前記
バブラの内部に導入されるバブリングガスの温度は前記
恒温槽の内部温度と同じ温度に制御されるため、前記バ
ブラの内部温度は常にほぼ−・定となる。したがって、
前記バブラの内部に入れられた原料の蒸気圧は設定され
た一定の値をとり、前記ガス導出管を通って前記反応ゾ
ーンへ輸送されるガスの原料含有率は設定された通りの
値となる。したがって、前記反応ゾーンへの原料の供給
は、その供給量を正確に行えることになるという効果が
ある。As explained above, in the present invention, the gas introduction pipe is provided with a temperature control section, so that the temperature of the bubbling gas introduced into the bubbler through the gas introduction pipe is controlled inside the thermostatic chamber. Since the temperature is controlled to be the same as the temperature, the internal temperature of the bubbler is always approximately constant. therefore,
The vapor pressure of the raw material put into the bubbler takes a preset constant value, and the raw material content of the gas transported to the reaction zone through the gas outlet pipe has the preset value. . Therefore, the raw material can be supplied to the reaction zone in an accurate amount.
第１図は発明の一実施例を示す縦断面図、第２図は従来
の技術を示す縦断面図である。
１：恒温槽、２：バブラ、３：熱媒介流動体、５：ガス
導出管、６＝原料、７：ガス導入管、８：温度制御部。FIG. 1 is a longitudinal sectional view showing one embodiment of the invention, and FIG. 2 is a longitudinal sectional view showing a conventional technique. 1: Constant temperature bath, 2: Bubbler, 3: Heat-transferring fluid, 5: Gas outlet pipe, 6 = Raw material, 7: Gas introduction pipe, 8: Temperature control section.
Claims (2)
管及びガス導出管と、前記バブラの温度を一定に保つ恒
温槽とからなるバブリング装置において、前記ガス導入
管に温度制御部を設けたことを特徴とするバブリング装
置。(1) In a bubbling device comprising a bubbler, a gas inlet pipe and a gas outlet pipe for passing gas through the bubbler, and a constant temperature bath for keeping the temperature of the bubbler constant, the gas inlet pipe is provided with a temperature control section. A bubbling device characterized by:
通過させたものであることを特徴とする特許請求の範囲
第１項記載のバブリング装置。(2) The bubbling device according to claim 1, wherein the temperature control section is one in which the gas introduction pipe is passed through the thermostatic chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14071484A JPS6120316A (en) | 1984-07-09 | 1984-07-09 | Bubbling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14071484A JPS6120316A (en) | 1984-07-09 | 1984-07-09 | Bubbling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6120316A true JPS6120316A (en) | 1986-01-29 |
Family
ID=15275003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14071484A Pending JPS6120316A (en) | 1984-07-09 | 1984-07-09 | Bubbling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6120316A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62247521A (en) * | 1986-04-18 | 1987-10-28 | Matsushita Electric Ind Co Ltd | Organic metal compound accommodating unit |
| CN110836946A (en) * | 2019-11-19 | 2020-02-25 | 中国科学技术大学 | Bubbling device capable of quantifying and controlling vapor concentration and concentration measurement method |
-
1984
- 1984-07-09 JP JP14071484A patent/JPS6120316A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62247521A (en) * | 1986-04-18 | 1987-10-28 | Matsushita Electric Ind Co Ltd | Organic metal compound accommodating unit |
| CN110836946A (en) * | 2019-11-19 | 2020-02-25 | 中国科学技术大学 | Bubbling device capable of quantifying and controlling vapor concentration and concentration measurement method |
| CN110836946B (en) * | 2019-11-19 | 2024-03-29 | 中国科学技术大学 | Bubbling device capable of quantitatively controlling vapor concentration and concentration measuring method |
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