JPS5568633A - Method and device for back etching of semiconductor substrate - Google Patents
Method and device for back etching of semiconductor substrateInfo
- Publication number
- JPS5568633A JPS5568633A JP14309378A JP14309378A JPS5568633A JP S5568633 A JPS5568633 A JP S5568633A JP 14309378 A JP14309378 A JP 14309378A JP 14309378 A JP14309378 A JP 14309378A JP S5568633 A JPS5568633 A JP S5568633A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- substrates
- liquid
- etching liquid
- bubbling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the scattering in the etching of semiconductor substrates, by etching the substrates in an etching liquid while revolving the substrates and cooling the etching liquid by bubbling of inert gas.
CONSTITUTION: A substrate cassette 13 is provided just over bubbling nozzles 9. When bubbles of an inert gas are supplied from nozzles 16 to vanes 14, 14' mounted on both the ends of the shaft 12 of the cassette 13, the cassette is rotated. Semiconductor substrates 4 and set on a holder 18 and fixed by stoppers 19. The back etching of the substrates is effected in an etching liquid while the substrates are revolved and the etching liquid is cooled by bubbling from a cooling pipe 7. Since the etching liquid is cooled throughout the etching operation, the lifetime of the liquid is lengthened and the scattering in the etching of the substrates is greatly reduced. Therefore, the etching liquid is economized.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14309378A JPS5568633A (en) | 1978-11-20 | 1978-11-20 | Method and device for back etching of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14309378A JPS5568633A (en) | 1978-11-20 | 1978-11-20 | Method and device for back etching of semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5568633A true JPS5568633A (en) | 1980-05-23 |
Family
ID=15330742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14309378A Pending JPS5568633A (en) | 1978-11-20 | 1978-11-20 | Method and device for back etching of semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5568633A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58123730A (en) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | Semiconductor wafer etching device |
JPS6386525A (en) * | 1986-09-30 | 1988-04-16 | Kyushu Denshi Kinzoku Kk | Device for etching semiconductor silicon wafer |
US5019205A (en) * | 1988-06-16 | 1991-05-28 | Texas Instruments Deutschland Gmbh | Apparatus for wet etching of thin films |
US5429705A (en) * | 1993-02-25 | 1995-07-04 | Leybold Aktiengesellschaft | Apparatus for coating and/or etching substrates in a vacuum chamber |
US5788800A (en) * | 1995-12-27 | 1998-08-04 | Samsung Electronics Co., Ltd. | Wet etching station and a wet etching method adapted for utilizing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4810532U (en) * | 1971-06-18 | 1973-02-06 | ||
JPS5339872A (en) * | 1976-09-24 | 1978-04-12 | Hitachi Ltd | Etching method of wafers |
JPS53101278A (en) * | 1977-02-16 | 1978-09-04 | Hitachi Ltd | Etching process method |
-
1978
- 1978-11-20 JP JP14309378A patent/JPS5568633A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4810532U (en) * | 1971-06-18 | 1973-02-06 | ||
JPS5339872A (en) * | 1976-09-24 | 1978-04-12 | Hitachi Ltd | Etching method of wafers |
JPS53101278A (en) * | 1977-02-16 | 1978-09-04 | Hitachi Ltd | Etching process method |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58123730A (en) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | Semiconductor wafer etching device |
JPS6386525A (en) * | 1986-09-30 | 1988-04-16 | Kyushu Denshi Kinzoku Kk | Device for etching semiconductor silicon wafer |
US5019205A (en) * | 1988-06-16 | 1991-05-28 | Texas Instruments Deutschland Gmbh | Apparatus for wet etching of thin films |
US5429705A (en) * | 1993-02-25 | 1995-07-04 | Leybold Aktiengesellschaft | Apparatus for coating and/or etching substrates in a vacuum chamber |
US5788800A (en) * | 1995-12-27 | 1998-08-04 | Samsung Electronics Co., Ltd. | Wet etching station and a wet etching method adapted for utilizing the same |
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