JPS5568633A - Method and device for back etching of semiconductor substrate - Google Patents

Method and device for back etching of semiconductor substrate

Info

Publication number
JPS5568633A
JPS5568633A JP14309378A JP14309378A JPS5568633A JP S5568633 A JPS5568633 A JP S5568633A JP 14309378 A JP14309378 A JP 14309378A JP 14309378 A JP14309378 A JP 14309378A JP S5568633 A JPS5568633 A JP S5568633A
Authority
JP
Japan
Prior art keywords
etching
substrates
liquid
etching liquid
bubbling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14309378A
Other languages
Japanese (ja)
Inventor
Shinichi Miyashita
Shigeru Terada
Yasuo Arima
Yoshikazu Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14309378A priority Critical patent/JPS5568633A/en
Publication of JPS5568633A publication Critical patent/JPS5568633A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the scattering in the etching of semiconductor substrates, by etching the substrates in an etching liquid while revolving the substrates and cooling the etching liquid by bubbling of inert gas.
CONSTITUTION: A substrate cassette 13 is provided just over bubbling nozzles 9. When bubbles of an inert gas are supplied from nozzles 16 to vanes 14, 14' mounted on both the ends of the shaft 12 of the cassette 13, the cassette is rotated. Semiconductor substrates 4 and set on a holder 18 and fixed by stoppers 19. The back etching of the substrates is effected in an etching liquid while the substrates are revolved and the etching liquid is cooled by bubbling from a cooling pipe 7. Since the etching liquid is cooled throughout the etching operation, the lifetime of the liquid is lengthened and the scattering in the etching of the substrates is greatly reduced. Therefore, the etching liquid is economized.
COPYRIGHT: (C)1980,JPO&Japio
JP14309378A 1978-11-20 1978-11-20 Method and device for back etching of semiconductor substrate Pending JPS5568633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14309378A JPS5568633A (en) 1978-11-20 1978-11-20 Method and device for back etching of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14309378A JPS5568633A (en) 1978-11-20 1978-11-20 Method and device for back etching of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5568633A true JPS5568633A (en) 1980-05-23

Family

ID=15330742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14309378A Pending JPS5568633A (en) 1978-11-20 1978-11-20 Method and device for back etching of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5568633A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123730A (en) * 1982-01-18 1983-07-23 Toshiba Corp Semiconductor wafer etching device
JPS6386525A (en) * 1986-09-30 1988-04-16 Kyushu Denshi Kinzoku Kk Device for etching semiconductor silicon wafer
US5019205A (en) * 1988-06-16 1991-05-28 Texas Instruments Deutschland Gmbh Apparatus for wet etching of thin films
US5429705A (en) * 1993-02-25 1995-07-04 Leybold Aktiengesellschaft Apparatus for coating and/or etching substrates in a vacuum chamber
US5788800A (en) * 1995-12-27 1998-08-04 Samsung Electronics Co., Ltd. Wet etching station and a wet etching method adapted for utilizing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4810532U (en) * 1971-06-18 1973-02-06
JPS5339872A (en) * 1976-09-24 1978-04-12 Hitachi Ltd Etching method of wafers
JPS53101278A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Etching process method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4810532U (en) * 1971-06-18 1973-02-06
JPS5339872A (en) * 1976-09-24 1978-04-12 Hitachi Ltd Etching method of wafers
JPS53101278A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Etching process method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123730A (en) * 1982-01-18 1983-07-23 Toshiba Corp Semiconductor wafer etching device
JPS6386525A (en) * 1986-09-30 1988-04-16 Kyushu Denshi Kinzoku Kk Device for etching semiconductor silicon wafer
US5019205A (en) * 1988-06-16 1991-05-28 Texas Instruments Deutschland Gmbh Apparatus for wet etching of thin films
US5429705A (en) * 1993-02-25 1995-07-04 Leybold Aktiengesellschaft Apparatus for coating and/or etching substrates in a vacuum chamber
US5788800A (en) * 1995-12-27 1998-08-04 Samsung Electronics Co., Ltd. Wet etching station and a wet etching method adapted for utilizing the same

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