JPS5565463A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5565463A
JPS5565463A JP14028578A JP14028578A JPS5565463A JP S5565463 A JPS5565463 A JP S5565463A JP 14028578 A JP14028578 A JP 14028578A JP 14028578 A JP14028578 A JP 14028578A JP S5565463 A JPS5565463 A JP S5565463A
Authority
JP
Japan
Prior art keywords
region
drain
groove
source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14028578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS638624B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP14028578A priority Critical patent/JPS5565463A/ja
Publication of JPS5565463A publication Critical patent/JPS5565463A/ja
Publication of JPS638624B2 publication Critical patent/JPS638624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14028578A 1978-11-13 1978-11-13 Semiconductor device Granted JPS5565463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14028578A JPS5565463A (en) 1978-11-13 1978-11-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14028578A JPS5565463A (en) 1978-11-13 1978-11-13 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5565463A true JPS5565463A (en) 1980-05-16
JPS638624B2 JPS638624B2 (enrdf_load_stackoverflow) 1988-02-23

Family

ID=15265216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14028578A Granted JPS5565463A (en) 1978-11-13 1978-11-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5565463A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761679A (en) * 1986-12-22 1988-08-02 North American Philips Corporation Complementary silicon-on-insulator lateral insulated gate rectifiers
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4992390A (en) * 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US5115287A (en) * 1986-11-19 1992-05-19 Research Development Corporation Of Japan Step-cut insulated gate static induction transistors and method of manufacturing the same
US5164325A (en) * 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US5242845A (en) * 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
US5385852A (en) * 1993-01-14 1995-01-31 Siemens Aktiengesellschaft Method for manufacturing vertical MOS transistors
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5929476A (en) * 1996-06-21 1999-07-27 Prall; Kirk Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US6500744B2 (en) 1999-09-02 2002-12-31 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
JP2007128965A (ja) * 2005-11-01 2007-05-24 Renesas Technology Corp スイッチング半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7609368B2 (ja) 2020-10-22 2025-01-07 富士フイルムビジネスイノベーション株式会社 液状組成物、金属光沢膜及び物品

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US5115287A (en) * 1986-11-19 1992-05-19 Research Development Corporation Of Japan Step-cut insulated gate static induction transistors and method of manufacturing the same
US4761679A (en) * 1986-12-22 1988-08-02 North American Philips Corporation Complementary silicon-on-insulator lateral insulated gate rectifiers
US5576245A (en) * 1987-10-08 1996-11-19 Siliconix Incorporated Method of making vertical current flow field effect transistor
US5164325A (en) * 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US5298781A (en) * 1987-10-08 1994-03-29 Siliconix Incorporated Vertical current flow field effect transistor with thick insulator over non-channel areas
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4992390A (en) * 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
US5242845A (en) * 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
US5385852A (en) * 1993-01-14 1995-01-31 Siemens Aktiengesellschaft Method for manufacturing vertical MOS transistors
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US6368920B1 (en) 1996-04-10 2002-04-09 Fairchild Semiconductor Corporation Trench MOS gate device
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5929476A (en) * 1996-06-21 1999-07-27 Prall; Kirk Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US6404008B1 (en) 1996-06-21 2002-06-11 Micron Technology, Inc. Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US6459610B1 (en) 1996-06-21 2002-10-01 Micron Technology, Inc. Semiconductor-on-insulator transistor, memory circuitry employing semiconductor-on-insulator transistors, method of forming a semiconductor-on-insulator transistor, and method of forming memory circuitry employing semiconductor-on-insulator transistors
US6586304B2 (en) 1996-06-21 2003-07-01 Micron Technology, Inc. Semiconductor-on-insulator transistor, memory circuitry employing semiconductor-on-insulator transistors, method of forming a semiconductor-on-insulator transistor, and method of forming memory circuitry employing semiconductor-on-insulator transistors
US6500744B2 (en) 1999-09-02 2002-12-31 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
US6740574B2 (en) 1999-09-02 2004-05-25 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
JP2007128965A (ja) * 2005-11-01 2007-05-24 Renesas Technology Corp スイッチング半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS638624B2 (enrdf_load_stackoverflow) 1988-02-23

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