JPS5559784A - Soalr battery - Google Patents

Soalr battery

Info

Publication number
JPS5559784A
JPS5559784A JP13698179A JP13698179A JPS5559784A JP S5559784 A JPS5559784 A JP S5559784A JP 13698179 A JP13698179 A JP 13698179A JP 13698179 A JP13698179 A JP 13698179A JP S5559784 A JPS5559784 A JP S5559784A
Authority
JP
Japan
Prior art keywords
soalr
battery
soalr battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13698179A
Other languages
English (en)
Other versions
JPH0147025B2 (ja
Inventor
Hetsutsueru Ruudorufu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPS5559784A publication Critical patent/JPS5559784A/ja
Publication of JPH0147025B2 publication Critical patent/JPH0147025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP13698179A 1978-10-23 1979-10-23 Soalr battery Granted JPS5559784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2846096A DE2846096C2 (de) 1978-10-23 1978-10-23 Solarzelle aus Halbleitermaterial

Publications (2)

Publication Number Publication Date
JPS5559784A true JPS5559784A (en) 1980-05-06
JPH0147025B2 JPH0147025B2 (ja) 1989-10-12

Family

ID=6052896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13698179A Granted JPS5559784A (en) 1978-10-23 1979-10-23 Soalr battery

Country Status (2)

Country Link
JP (1) JPS5559784A (ja)
DE (1) DE2846096C2 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130482A (en) * 1981-02-05 1982-08-12 Semiconductor Energy Lab Co Ltd Mis type photoelectric transducer
JPH02201972A (ja) * 1989-01-30 1990-08-10 Kyocera Corp 太陽電池
JPH0878709A (ja) * 1994-09-06 1996-03-22 Hitachi Ltd 太陽電池
JP2009164544A (ja) * 2007-12-28 2009-07-23 Ind Technol Res Inst 太陽電池のパッシベーション層構造およびその製造方法
JP2010067920A (ja) * 2008-09-12 2010-03-25 Sharp Corp 光電変換装置
JP2010067921A (ja) * 2008-09-12 2010-03-25 Sharp Corp 光電変換装置
JP2010539727A (ja) * 2008-04-17 2010-12-16 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
JP2011086961A (ja) * 2011-01-26 2011-04-28 Sharp Corp 光電変換装置
JP2013509005A (ja) * 2009-10-27 2013-03-07 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 太陽電池における表面再結合を低減させて光トラッピングを高める方法
JP2014075440A (ja) * 2012-10-03 2014-04-24 Hyogo Prefecture 界面安定化膜を備えた太陽電池
JP5848417B1 (ja) * 2014-08-26 2016-01-27 信越化学工業株式会社 太陽電池及び太陽電池の製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
DE3542116A1 (de) * 1985-11-28 1987-06-04 Nukem Gmbh Photovoltaische zelle
DE3831857A1 (de) * 1988-09-20 1990-03-22 Meinhard Prof Dr Ing Knoll Verfahren zur herstellung eines lichtdurchlaessigen dielektrikums aus einer dotierten silizium-verbindung bei einer inversionsschicht-solarzelle
DE4227504A1 (de) * 1992-08-20 1994-02-24 Kern Ralf M Photovoltaische Zelle
DE102008045522A1 (de) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
DE102008055036A1 (de) * 2008-12-19 2010-07-08 Q-Cells Se Solarzelle
DE102008055028A1 (de) * 2008-12-19 2010-07-01 Q-Cells Se Solarzelle

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5282087A (en) * 1976-06-02 1977-07-08 Seiko Epson Corp Production of solar cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2063726C3 (de) * 1970-12-24 1979-09-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
FR2230086A1 (en) * 1973-05-14 1974-12-13 Centre Nat Etd Spatiales Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5282087A (en) * 1976-06-02 1977-07-08 Seiko Epson Corp Production of solar cell

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130482A (en) * 1981-02-05 1982-08-12 Semiconductor Energy Lab Co Ltd Mis type photoelectric transducer
JPH0562473B2 (ja) * 1981-02-05 1993-09-08 Handotai Energy Kenkyusho
JPH02201972A (ja) * 1989-01-30 1990-08-10 Kyocera Corp 太陽電池
JPH0878709A (ja) * 1994-09-06 1996-03-22 Hitachi Ltd 太陽電池
JP2009164544A (ja) * 2007-12-28 2009-07-23 Ind Technol Res Inst 太陽電池のパッシベーション層構造およびその製造方法
JP2010539727A (ja) * 2008-04-17 2010-12-16 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
JP2010067920A (ja) * 2008-09-12 2010-03-25 Sharp Corp 光電変換装置
JP2010067921A (ja) * 2008-09-12 2010-03-25 Sharp Corp 光電変換装置
JP2013509005A (ja) * 2009-10-27 2013-03-07 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 太陽電池における表面再結合を低減させて光トラッピングを高める方法
JP2011086961A (ja) * 2011-01-26 2011-04-28 Sharp Corp 光電変換装置
JP2014075440A (ja) * 2012-10-03 2014-04-24 Hyogo Prefecture 界面安定化膜を備えた太陽電池
JP5848417B1 (ja) * 2014-08-26 2016-01-27 信越化学工業株式会社 太陽電池及び太陽電池の製造方法

Also Published As

Publication number Publication date
DE2846096A1 (de) 1980-04-24
DE2846096C2 (de) 1985-01-10
JPH0147025B2 (ja) 1989-10-12

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