FR2230086A1 - Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions - Google Patents

Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Info

Publication number
FR2230086A1
FR2230086A1 FR7317345A FR7317345A FR2230086A1 FR 2230086 A1 FR2230086 A1 FR 2230086A1 FR 7317345 A FR7317345 A FR 7317345A FR 7317345 A FR7317345 A FR 7317345A FR 2230086 A1 FR2230086 A1 FR 2230086A1
Authority
FR
France
Prior art keywords
obtd
substrate
high efficiency
type
solar cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7317345A
Other languages
French (fr)
Other versions
FR2230086B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Original Assignee
Centre National dEtudes Spatiales CNES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES filed Critical Centre National dEtudes Spatiales CNES
Priority to FR7317345A priority Critical patent/FR2230086A1/en
Publication of FR2230086A1 publication Critical patent/FR2230086A1/en
Application granted granted Critical
Publication of FR2230086B1 publication Critical patent/FR2230086B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A cell with its absorption band in the visible spectrum, comprising a p- or n- doped substrate contg., on the window side, a grid of the opposite type, i.e. n- or p-, and covered with a transparent dielectric. The transparent dielectric is charged to a small part of its total height by trapped ions which are positive or negative when the substrate is p- or n- type respectively, the ion-density being sufficient to cause an inversion at the substrate surface. The pref. substrate is Si, which, if p-type, is covered with SiO2 doped with e.g. Mg++, Ca++, Zn++; if the Si is n-type, the SiO2 is doped with Br-, Cl-, OH- or I-. The advantage, esp. for space-vehicles, is the min. efficiency of 17%, as compared with the low efficiency of 7-11% obtd. from known cells.
FR7317345A 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions Granted FR2230086A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7317345A FR2230086A1 (en) 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317345A FR2230086A1 (en) 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Publications (2)

Publication Number Publication Date
FR2230086A1 true FR2230086A1 (en) 1974-12-13
FR2230086B1 FR2230086B1 (en) 1977-04-29

Family

ID=9119276

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7317345A Granted FR2230086A1 (en) 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Country Status (1)

Country Link
FR (1) FR2230086A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644829A1 (en) * 1975-10-08 1977-04-21 Rca Corp SEMI-CONDUCTOR ADAPTER
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
EP0009125A1 (en) * 1978-09-19 1980-04-02 Siemens Aktiengesellschaft Semiconductor component with passivating protection layer
DE2846096A1 (en) * 1978-10-23 1980-04-24 Rudolf Dipl Phys Dr Hezel Solar cell with double insulating layer - of silicon oxide produced at low temp. and different insulant to decouple fixed surface charge
FR2440081A1 (en) * 1978-10-23 1980-05-23 Hezel Rudolf SOLAR CELL IN SEMICONDUCTOR MATERIAL
US4404422A (en) * 1980-09-26 1983-09-13 Unisearch Limited High efficiency solar cell structure
WO1994028589A1 (en) * 1993-06-01 1994-12-08 Electric Power Research Institute Advanced solar cell
EP3583630A4 (en) * 2017-02-15 2020-12-30 ElFys Oy Semiconductor structures and manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644829A1 (en) * 1975-10-08 1977-04-21 Rca Corp SEMI-CONDUCTOR ADAPTER
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
EP0009125A1 (en) * 1978-09-19 1980-04-02 Siemens Aktiengesellschaft Semiconductor component with passivating protection layer
DE2846096A1 (en) * 1978-10-23 1980-04-24 Rudolf Dipl Phys Dr Hezel Solar cell with double insulating layer - of silicon oxide produced at low temp. and different insulant to decouple fixed surface charge
FR2440081A1 (en) * 1978-10-23 1980-05-23 Hezel Rudolf SOLAR CELL IN SEMICONDUCTOR MATERIAL
US4404422A (en) * 1980-09-26 1983-09-13 Unisearch Limited High efficiency solar cell structure
WO1994028589A1 (en) * 1993-06-01 1994-12-08 Electric Power Research Institute Advanced solar cell
EP3583630A4 (en) * 2017-02-15 2020-12-30 ElFys Oy Semiconductor structures and manufacturing the same
US10950737B2 (en) 2017-02-15 2021-03-16 Elfys Oy Semiconductor structures and manufacturing the same

Also Published As

Publication number Publication date
FR2230086B1 (en) 1977-04-29

Similar Documents

Publication Publication Date Title
GB1423085A (en) Thin low temperature epi regions by conversion of an amorphous layer
FR2230086A1 (en) Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions
EP0241226A3 (en) Semiconductor device and method of making it
AU498057B2 (en) High efficiency selenium heterojunction solar cells
ES463950A1 (en) Liquid-semiconductor junction photocells
JPS55130182A (en) P-n hetero junction solar battery
JPS52124888A (en) Production of solar battery
JPS5548964A (en) High-voltage-resisting planar semiconductor device
ES8201769A1 (en) Photovoltaic cell suitable for manufacturing solar power units.
JPS55141766A (en) Manufacturing of semiconductor light position detector
JPS5680178A (en) Gaas solar cell
CALL Inversion layer solar cell fabrication and evaluation(Inversion layer silicon solar cells with induced junctions)[Midway Report]
JPS57107080A (en) Amorphous thin film solar cell
JPS531484A (en) Solar cell for watches
JPS5745273A (en) Semiconductor device
JPS56148875A (en) Photoelectric conversion semiconductor device and manufacture thereof
CRABB Photon induced degradation of electron irradiated silicon solar cells(Electron irradiated float-zone Si solar cell I-V performance degradation due to photon irradiation, noting base region minority carrier lifetime role)
JPS5279871A (en) Production of impurity diffused layer
Gavrilov et al. Solar cells from gallium arsenide obtained by ion bombardment
STANNARD Hall effect study of electron irradiated Si (Li)(Hall coefficients for determining donor and acceptor concentration in lithium doped and phosphorus doped irradiated silicon)
JPS57184253A (en) Manufacture of indoor silicon solar cell
JPS56142649A (en) Semiconductor device
JPS55134954A (en) Preparation of semiconductor device
JPS5627920A (en) Impurity diffusing method
JPS5683036A (en) Glass passivation of mesa type semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse