JPS5548973A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5548973A
JPS5548973A JP12079278A JP12079278A JPS5548973A JP S5548973 A JPS5548973 A JP S5548973A JP 12079278 A JP12079278 A JP 12079278A JP 12079278 A JP12079278 A JP 12079278A JP S5548973 A JPS5548973 A JP S5548973A
Authority
JP
Japan
Prior art keywords
film
oxide film
transistor
drain
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12079278A
Other languages
Japanese (ja)
Other versions
JPS6043039B2 (en
Inventor
Norio Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53120792A priority Critical patent/JPS6043039B2/en
Publication of JPS5548973A publication Critical patent/JPS5548973A/en
Publication of JPS6043039B2 publication Critical patent/JPS6043039B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a memory device, which has a sufficient operating capacity even in a low current region, by eliminating a parasitic MOS transistor by a simple structure. CONSTITUTION:An n<+> source 12, a drain 13, a gate insulation film 14, a gate electrode 15, an oxide film 16 and a field oxide film 17 are formed on a p-type Si 11, and the film 14 is composed of 2 layers including extremely thin SiO2 film 141, and a thick Si3N4 film 142. The gate electrode 15 is overlaid on the end of the field oxide film 17 at the side of a channel, and notches F and G are specially provided at this section. In this mechanism, the source and the drain are possessed in common in parallel with a memory transistor and a parastic transistor is not included. And therefore, it is possible to obtain a sufficient operating capacity in a low current region even in the condition in which an MNOS memory transistor's threshold value is largely changed to plus side.
JP53120792A 1978-09-30 1978-09-30 semiconductor storage device Expired JPS6043039B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53120792A JPS6043039B2 (en) 1978-09-30 1978-09-30 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53120792A JPS6043039B2 (en) 1978-09-30 1978-09-30 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5548973A true JPS5548973A (en) 1980-04-08
JPS6043039B2 JPS6043039B2 (en) 1985-09-26

Family

ID=14795103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53120792A Expired JPS6043039B2 (en) 1978-09-30 1978-09-30 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6043039B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887877A (en) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd Semiconductor nonvolatile memory
US5135702A (en) * 1990-09-04 1992-08-04 Eales George E Extrusion blow molding process for forming multi-compartment containers
US5240788A (en) * 1990-09-04 1993-08-31 Eales George E Multi-compartment blow molded container
JPH06252392A (en) * 1993-03-01 1994-09-09 Nec Corp Field effect transistor
US6063223A (en) * 1996-09-04 2000-05-16 Owens-Brockway Plastic Products Inc. Dual chamber flexible tube dispensing package and method of making

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887877A (en) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd Semiconductor nonvolatile memory
US5135702A (en) * 1990-09-04 1992-08-04 Eales George E Extrusion blow molding process for forming multi-compartment containers
US5240788A (en) * 1990-09-04 1993-08-31 Eales George E Multi-compartment blow molded container
JPH06252392A (en) * 1993-03-01 1994-09-09 Nec Corp Field effect transistor
US6063223A (en) * 1996-09-04 2000-05-16 Owens-Brockway Plastic Products Inc. Dual chamber flexible tube dispensing package and method of making

Also Published As

Publication number Publication date
JPS6043039B2 (en) 1985-09-26

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