JPS5538085A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5538085A
JPS5538085A JP11207678A JP11207678A JPS5538085A JP S5538085 A JPS5538085 A JP S5538085A JP 11207678 A JP11207678 A JP 11207678A JP 11207678 A JP11207678 A JP 11207678A JP S5538085 A JPS5538085 A JP S5538085A
Authority
JP
Japan
Prior art keywords
opening
film
emulsion type
resin
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11207678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6210007B2 (enrdf_load_stackoverflow
Inventor
Manzo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11207678A priority Critical patent/JPS5538085A/ja
Publication of JPS5538085A publication Critical patent/JPS5538085A/ja
Publication of JPS6210007B2 publication Critical patent/JPS6210007B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
JP11207678A 1978-09-11 1978-09-11 Production of semiconductor device Granted JPS5538085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11207678A JPS5538085A (en) 1978-09-11 1978-09-11 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11207678A JPS5538085A (en) 1978-09-11 1978-09-11 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5538085A true JPS5538085A (en) 1980-03-17
JPS6210007B2 JPS6210007B2 (enrdf_load_stackoverflow) 1987-03-04

Family

ID=14577462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11207678A Granted JPS5538085A (en) 1978-09-11 1978-09-11 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538085A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141940A (ja) * 2005-11-15 2007-06-07 Nissan Motor Co Ltd 複合不純物構造体の製造方法、半導体装置、mos電界効果トランジスタ、及び絶縁ゲート型バイポーラトランジスタ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138769A (enrdf_load_stackoverflow) * 1974-04-23 1975-11-05
JPS5391676A (en) * 1977-01-24 1978-08-11 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138769A (enrdf_load_stackoverflow) * 1974-04-23 1975-11-05
JPS5391676A (en) * 1977-01-24 1978-08-11 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141940A (ja) * 2005-11-15 2007-06-07 Nissan Motor Co Ltd 複合不純物構造体の製造方法、半導体装置、mos電界効果トランジスタ、及び絶縁ゲート型バイポーラトランジスタ

Also Published As

Publication number Publication date
JPS6210007B2 (enrdf_load_stackoverflow) 1987-03-04

Similar Documents

Publication Publication Date Title
JPS5470762A (en) Semiconductor device
JPS5538085A (en) Production of semiconductor device
JPS53124087A (en) Manufacture of semiconductor device
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS53147549A (en) Forming method of antireflection film
JPS5352133A (en) Electrophotographic method
JPS5435682A (en) Manufacture of field effect transistor
JPS53123678A (en) Manufacture of field effect semiconductor device of insulation gate type
JPS5252576A (en) Production of semiconductor device
JPS5430797A (en) Formation method of substrate for liquid-crystal cell
JPS5377168A (en) Production of semiconductor device
JPS5432269A (en) Manufacture for semiconductor device
JPS5442987A (en) Manufacture of semiconductor device
JPS52104881A (en) Manufacture for semiconductor device
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS5210070A (en) Method for manufacturing silicon semiconductor device
JPS5232683A (en) Manufacturing process of semiconductor device
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS53147468A (en) Production of semiconductor device
JPS52155069A (en) Production of field effect control type semiconductor device
JPS51148356A (en) Manufacturing method of semiconductor device
JPS51151071A (en) Manufacturing method of a semiconductor apparatus
JPS5226169A (en) Photoetching method of silicone oxide layer
JPS5423483A (en) Manufacture for semiconductor device
JPS5374387A (en) Manufacture of semiconductor device