JPS5534462A - Method and apparatus for semiconductor - Google Patents

Method and apparatus for semiconductor

Info

Publication number
JPS5534462A
JPS5534462A JP10713778A JP10713778A JPS5534462A JP S5534462 A JPS5534462 A JP S5534462A JP 10713778 A JP10713778 A JP 10713778A JP 10713778 A JP10713778 A JP 10713778A JP S5534462 A JPS5534462 A JP S5534462A
Authority
JP
Japan
Prior art keywords
layer
concentrated
iil
type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10713778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6133261B2 (en, 2012
Inventor
Tsutomu Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10713778A priority Critical patent/JPS5534462A/ja
Publication of JPS5534462A publication Critical patent/JPS5534462A/ja
Publication of JPS6133261B2 publication Critical patent/JPS6133261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/658Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP10713778A 1978-08-31 1978-08-31 Method and apparatus for semiconductor Granted JPS5534462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10713778A JPS5534462A (en) 1978-08-31 1978-08-31 Method and apparatus for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10713778A JPS5534462A (en) 1978-08-31 1978-08-31 Method and apparatus for semiconductor

Publications (2)

Publication Number Publication Date
JPS5534462A true JPS5534462A (en) 1980-03-11
JPS6133261B2 JPS6133261B2 (en, 2012) 1986-08-01

Family

ID=14451438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10713778A Granted JPS5534462A (en) 1978-08-31 1978-08-31 Method and apparatus for semiconductor

Country Status (1)

Country Link
JP (1) JPS5534462A (en, 2012)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6015787A (ja) * 1983-07-07 1985-01-26 日本信号株式会社 定期乗車券の区間判定方法
JPS61207066A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd バイポ−ラトランジスタ
JPS61207067A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd 半導体集積回路装置の製造方法
JPS61208262A (ja) * 1985-03-13 1986-09-16 Sanyo Electric Co Ltd トランジスタ
JPS61208263A (ja) * 1985-03-13 1986-09-16 Sanyo Electric Co Ltd トランジスタの製造方法
JPS62295458A (ja) * 1986-05-19 1987-12-22 Sanyo Electric Co Ltd スイツチ回路

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6015787A (ja) * 1983-07-07 1985-01-26 日本信号株式会社 定期乗車券の区間判定方法
JPS61207066A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd バイポ−ラトランジスタ
JPS61207067A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd 半導体集積回路装置の製造方法
JPS61208262A (ja) * 1985-03-13 1986-09-16 Sanyo Electric Co Ltd トランジスタ
JPS61208263A (ja) * 1985-03-13 1986-09-16 Sanyo Electric Co Ltd トランジスタの製造方法
JPS62295458A (ja) * 1986-05-19 1987-12-22 Sanyo Electric Co Ltd スイツチ回路

Also Published As

Publication number Publication date
JPS6133261B2 (en, 2012) 1986-08-01

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