JPS6133261B2 - - Google Patents
Info
- Publication number
- JPS6133261B2 JPS6133261B2 JP53107137A JP10713778A JPS6133261B2 JP S6133261 B2 JPS6133261 B2 JP S6133261B2 JP 53107137 A JP53107137 A JP 53107137A JP 10713778 A JP10713778 A JP 10713778A JP S6133261 B2 JPS6133261 B2 JP S6133261B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- collector
- emitter
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 description 19
- 238000003199 nucleic acid amplification method Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10713778A JPS5534462A (en) | 1978-08-31 | 1978-08-31 | Method and apparatus for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10713778A JPS5534462A (en) | 1978-08-31 | 1978-08-31 | Method and apparatus for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5534462A JPS5534462A (en) | 1980-03-11 |
| JPS6133261B2 true JPS6133261B2 (en, 2012) | 1986-08-01 |
Family
ID=14451438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10713778A Granted JPS5534462A (en) | 1978-08-31 | 1978-08-31 | Method and apparatus for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5534462A (en, 2012) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6015787A (ja) * | 1983-07-07 | 1985-01-26 | 日本信号株式会社 | 定期乗車券の区間判定方法 |
| JPS61207066A (ja) * | 1985-03-12 | 1986-09-13 | Sanyo Electric Co Ltd | バイポ−ラトランジスタ |
| JPS61207067A (ja) * | 1985-03-12 | 1986-09-13 | Sanyo Electric Co Ltd | 半導体集積回路装置の製造方法 |
| JPS61208263A (ja) * | 1985-03-13 | 1986-09-16 | Sanyo Electric Co Ltd | トランジスタの製造方法 |
| JPS61208262A (ja) * | 1985-03-13 | 1986-09-16 | Sanyo Electric Co Ltd | トランジスタ |
| JPS62295458A (ja) * | 1986-05-19 | 1987-12-22 | Sanyo Electric Co Ltd | スイツチ回路 |
-
1978
- 1978-08-31 JP JP10713778A patent/JPS5534462A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5534462A (en) | 1980-03-11 |
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