JPS6151429B2 - - Google Patents

Info

Publication number
JPS6151429B2
JPS6151429B2 JP51147928A JP14792876A JPS6151429B2 JP S6151429 B2 JPS6151429 B2 JP S6151429B2 JP 51147928 A JP51147928 A JP 51147928A JP 14792876 A JP14792876 A JP 14792876A JP S6151429 B2 JPS6151429 B2 JP S6151429B2
Authority
JP
Japan
Prior art keywords
region
collector
base
emitter
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51147928A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5283179A (en
Inventor
Uiriamu Kuwatsupu Seodooru
Ii Magudoo Inguritsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5283179A publication Critical patent/JPS5283179A/ja
Publication of JPS6151429B2 publication Critical patent/JPS6151429B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP14792876A 1975-12-31 1976-12-10 Semiconductor Granted JPS5283179A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/645,760 US4079408A (en) 1975-12-31 1975-12-31 Semiconductor structure with annular collector/subcollector region

Publications (2)

Publication Number Publication Date
JPS5283179A JPS5283179A (en) 1977-07-11
JPS6151429B2 true JPS6151429B2 (en, 2012) 1986-11-08

Family

ID=24590375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14792876A Granted JPS5283179A (en) 1975-12-31 1976-12-10 Semiconductor

Country Status (4)

Country Link
US (1) US4079408A (en, 2012)
JP (1) JPS5283179A (en, 2012)
DE (1) DE2654816A1 (en, 2012)
FR (1) FR2352402A1 (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
US4737837A (en) * 1985-11-27 1988-04-12 Honeywell Inc. Ring topology for an integrated circuit logic cell
US5969402A (en) * 1997-07-18 1999-10-19 Advanced Micro Devices, Inc. Reduction of depletion spreading sideways utilizing slots
US5912501A (en) * 1997-07-18 1999-06-15 Advanced Micro Devices, Inc. Elimination of radius of curvature effects of p-n junction avalanche breakdown using slots
US6232150B1 (en) 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
JP2006186225A (ja) * 2004-12-28 2006-07-13 Nec Electronics Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3229119A (en) * 1963-05-17 1966-01-11 Sylvania Electric Prod Transistor logic circuits
US3482111A (en) * 1966-03-04 1969-12-02 Ncr Co High speed logical circuit
US3510736A (en) * 1967-11-17 1970-05-05 Rca Corp Integrated circuit planar transistor
US3909837A (en) * 1968-12-31 1975-09-30 Texas Instruments Inc High-speed transistor with rectifying contact connected between base and collector
US3622842A (en) * 1969-12-29 1971-11-23 Ibm Semiconductor device having high-switching speed and method of making
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
US3916431A (en) * 1974-06-21 1975-10-28 Rca Corp Bipolar integrated circuit transistor with lightly doped subcollector core

Also Published As

Publication number Publication date
DE2654816A1 (de) 1977-07-07
JPS5283179A (en) 1977-07-11
US4079408A (en) 1978-03-14
FR2352402B1 (en, 2012) 1979-09-28
FR2352402A1 (fr) 1977-12-16

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