JPS5533020A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5533020A JPS5533020A JP10477078A JP10477078A JPS5533020A JP S5533020 A JPS5533020 A JP S5533020A JP 10477078 A JP10477078 A JP 10477078A JP 10477078 A JP10477078 A JP 10477078A JP S5533020 A JPS5533020 A JP S5533020A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacture
- defects
- planar
- annealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000007547 defect Effects 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10477078A JPS5533020A (en) | 1978-08-28 | 1978-08-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10477078A JPS5533020A (en) | 1978-08-28 | 1978-08-28 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533020A true JPS5533020A (en) | 1980-03-08 |
JPS6152976B2 JPS6152976B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Family
ID=14389702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10477078A Granted JPS5533020A (en) | 1978-08-28 | 1978-08-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533020A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421082A (en) * | 1977-07-18 | 1979-02-16 | Aloka Co Ltd | Ultrasonic wave diagnosing probe |
JPS59218726A (ja) * | 1983-05-26 | 1984-12-10 | Mitsubishi Heavy Ind Ltd | 半導体の処理方法 |
JPH0472736A (ja) * | 1990-07-13 | 1992-03-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0745167A (ja) * | 1993-07-28 | 1995-02-14 | Sunx Ltd | 検出スイッチ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5321572A (en) * | 1976-08-11 | 1978-02-28 | Hitachi Ltd | Production of semiconductor device |
-
1978
- 1978-08-28 JP JP10477078A patent/JPS5533020A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5321572A (en) * | 1976-08-11 | 1978-02-28 | Hitachi Ltd | Production of semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421082A (en) * | 1977-07-18 | 1979-02-16 | Aloka Co Ltd | Ultrasonic wave diagnosing probe |
JPS59218726A (ja) * | 1983-05-26 | 1984-12-10 | Mitsubishi Heavy Ind Ltd | 半導体の処理方法 |
JPH0472736A (ja) * | 1990-07-13 | 1992-03-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0745167A (ja) * | 1993-07-28 | 1995-02-14 | Sunx Ltd | 検出スイッチ |
Also Published As
Publication number | Publication date |
---|---|
JPS6152976B2 (enrdf_load_stackoverflow) | 1986-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5321572A (en) | Production of semiconductor device | |
JPS5226160A (en) | Method of eliminating intrinsic crystal defect from semiconductor wafer | |
JPS5533020A (en) | Manufacture of semiconductor device | |
JPS5785262A (en) | Manufacture of metal oxide semiconductor type semiconductor device | |
JPS52106279A (en) | Manufacture of semiconductor ic | |
JPS5419649A (en) | Wafer holding jig for electrtolytic plating | |
JPS546480A (en) | Semiconductor device | |
JPS5635434A (en) | Manufacturing of semiconductor device | |
JPS5247676A (en) | Process for production of semiconductor device | |
JPS544084A (en) | Manufacture for semiconductor integrated circuit | |
JPS5441665A (en) | Manufacture for semiconductor device | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS52100982A (en) | Semiconductor device | |
JPS5586123A (en) | Manufacture of semiconductor device | |
JPS53145583A (en) | Semiconductor device and production of the same | |
JPS5423467A (en) | Singlecrystal growing method for binary semiconductor | |
JPS52129275A (en) | Impurity diffusion method | |
JPS5387666A (en) | Anodic oxidation method | |
JPS524789A (en) | Semiconductor equipment | |
JPS53116771A (en) | Production of semiconductor device | |
JPS5387164A (en) | Heat traetment method of compound crystal | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
JPS5418685A (en) | Manufacture of field effect type semiconductor device | |
JPS5273673A (en) | Production of semiconductor device |