JPS5527697A - Bipolar semiconductor integrated circuit and method of manufacturing same - Google Patents
Bipolar semiconductor integrated circuit and method of manufacturing sameInfo
- Publication number
- JPS5527697A JPS5527697A JP10215179A JP10215179A JPS5527697A JP S5527697 A JPS5527697 A JP S5527697A JP 10215179 A JP10215179 A JP 10215179A JP 10215179 A JP10215179 A JP 10215179A JP S5527697 A JPS5527697 A JP S5527697A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- manufacturing same
- bipolar semiconductor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782835330 DE2835330C3 (de) | 1978-08-11 | 1978-08-11 | Integrierter bipolarer Halbleiterschaltkreis sowie Verfahren zu seiner Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5527697A true JPS5527697A (en) | 1980-02-27 |
Family
ID=6046848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10215179A Pending JPS5527697A (en) | 1978-08-11 | 1979-08-10 | Bipolar semiconductor integrated circuit and method of manufacturing same |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0008043B1 (ja) |
JP (1) | JPS5527697A (ja) |
DE (1) | DE2835330C3 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3020609C2 (de) * | 1979-05-31 | 1985-11-07 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element |
GB2056768B (en) * | 1979-07-16 | 1983-07-27 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuits |
DE3011211A1 (de) * | 1980-03-22 | 1981-10-01 | Clinicon Mannheim GmbH, 6800 Mannheim | Blutlanzettenvorrichtung zur entnahme von blut fuer diagnosezwecke |
EP0054303B1 (en) * | 1980-12-17 | 1986-06-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
SE8105041L (sv) * | 1981-08-25 | 1983-02-26 | Ericsson Telefon Ab L M | Planartransistor med integrerat overspenningsskydd |
US4546539A (en) * | 1982-12-08 | 1985-10-15 | Harris Corporation | I2 L Structure and fabrication process compatible with high voltage bipolar transistors |
DE3618166A1 (de) * | 1986-05-30 | 1987-12-03 | Telefunken Electronic Gmbh | Lateraltransistor |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5164386A (ja) * | 1974-10-09 | 1976-06-03 | Philips Nv | |
JPS5169987A (ja) * | 1974-11-08 | 1976-06-17 | Itt | |
JPS5220756A (en) * | 1975-06-30 | 1977-02-16 | Signetics Corp | Logical circuit and ic semiconductor |
JPS5235582A (en) * | 1975-09-13 | 1977-03-18 | Toshiba Corp | Transistor |
JPS5247383A (en) * | 1975-10-13 | 1977-04-15 | Toshiba Corp | Semiconductor device |
JPS5261977A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and its production |
JPS5267275A (en) * | 1976-10-08 | 1977-06-03 | Sony Corp | Semiconductor unit |
JPS5275281A (en) * | 1975-12-19 | 1977-06-24 | Mitsubishi Electric Corp | Semiconductor device |
JPS52115673A (en) * | 1975-07-22 | 1977-09-28 | Itt | Monolithic ic and method of producing same by planar diffusion |
JPS52141587A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its process |
JPS5344186A (en) * | 1976-10-04 | 1978-04-20 | Toshiba Corp | Semiconductor device |
JPS5350686A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Production of semiconductor integrated circuit |
JPS53108783A (en) * | 1977-03-04 | 1978-09-21 | Toshiba Corp | Production of semiconductor device |
JPS53121587A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
DE2455347A1 (de) * | 1974-11-22 | 1976-05-26 | Itt Ind Gmbh Deutsche | Monolithisch integrierte festkoerperschaltung und herstellungsverfahren |
DE2532608C2 (de) * | 1975-07-22 | 1982-09-02 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung |
JPS5269587A (en) * | 1975-12-08 | 1977-06-09 | Hitachi Ltd | Device and manufacture for high voltage resisting semiconductor |
DE2557911C2 (de) * | 1975-12-22 | 1982-11-04 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen einer monolithisch integrierten Schaltung |
IT1088974B (it) * | 1977-01-12 | 1985-06-10 | Rca Corp | Struttura a semiconduttori comprendente dispositivi per applicazioni a bassa tensione e ad alta tensione e metodo di preparazione della stessa |
-
1978
- 1978-08-11 DE DE19782835330 patent/DE2835330C3/de not_active Expired
-
1979
- 1979-07-26 EP EP19790102670 patent/EP0008043B1/de not_active Expired
- 1979-08-10 JP JP10215179A patent/JPS5527697A/ja active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5164386A (ja) * | 1974-10-09 | 1976-06-03 | Philips Nv | |
JPS5169987A (ja) * | 1974-11-08 | 1976-06-17 | Itt | |
JPS5220756A (en) * | 1975-06-30 | 1977-02-16 | Signetics Corp | Logical circuit and ic semiconductor |
JPS52115673A (en) * | 1975-07-22 | 1977-09-28 | Itt | Monolithic ic and method of producing same by planar diffusion |
JPS5235582A (en) * | 1975-09-13 | 1977-03-18 | Toshiba Corp | Transistor |
JPS5247383A (en) * | 1975-10-13 | 1977-04-15 | Toshiba Corp | Semiconductor device |
JPS5261977A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and its production |
JPS5275281A (en) * | 1975-12-19 | 1977-06-24 | Mitsubishi Electric Corp | Semiconductor device |
JPS52141587A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its process |
JPS5344186A (en) * | 1976-10-04 | 1978-04-20 | Toshiba Corp | Semiconductor device |
JPS5267275A (en) * | 1976-10-08 | 1977-06-03 | Sony Corp | Semiconductor unit |
JPS5350686A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Production of semiconductor integrated circuit |
JPS53108783A (en) * | 1977-03-04 | 1978-09-21 | Toshiba Corp | Production of semiconductor device |
JPS53121587A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE2835330C3 (de) | 1982-03-11 |
EP0008043B1 (de) | 1982-05-05 |
DE2835330A1 (de) | 1980-02-14 |
DE2835330B2 (de) | 1981-07-02 |
EP0008043A1 (de) | 1980-02-20 |
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