JPS5518002A - Manufacturing semiconductor element - Google Patents

Manufacturing semiconductor element

Info

Publication number
JPS5518002A
JPS5518002A JP8990878A JP8990878A JPS5518002A JP S5518002 A JPS5518002 A JP S5518002A JP 8990878 A JP8990878 A JP 8990878A JP 8990878 A JP8990878 A JP 8990878A JP S5518002 A JPS5518002 A JP S5518002A
Authority
JP
Japan
Prior art keywords
psg
etching
inverted
size
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8990878A
Other languages
Japanese (ja)
Inventor
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8990878A priority Critical patent/JPS5518002A/en
Publication of JPS5518002A publication Critical patent/JPS5518002A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To reduce the size of a device by providing a PSG film on a semiconductor substrate, forming an inverted-V-shaped taper after heat treatment and etching, and laying fine wire.
CONSTITUTION: PSG 22, which is formed on an Si substrate 21, is treated in N2 at a high temperature, and the P at the surface is diffused to the outside. Therefore, since the etching speed on the surface is retarded, an inverted-V-shaped step 23 is formed when an opening 25 is made by etching. When the PSG 22 is lifted off after the evaporation of Al 24, an Al wiring layer 26 is obtained. In this method, since the fine wiring having a narrow pattern pitch can be produced, the size of the device can be reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP8990878A 1978-07-25 1978-07-25 Manufacturing semiconductor element Pending JPS5518002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8990878A JPS5518002A (en) 1978-07-25 1978-07-25 Manufacturing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8990878A JPS5518002A (en) 1978-07-25 1978-07-25 Manufacturing semiconductor element

Publications (1)

Publication Number Publication Date
JPS5518002A true JPS5518002A (en) 1980-02-07

Family

ID=13983809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8990878A Pending JPS5518002A (en) 1978-07-25 1978-07-25 Manufacturing semiconductor element

Country Status (1)

Country Link
JP (1) JPS5518002A (en)

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