JPS55165681A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS55165681A
JPS55165681A JP7413479A JP7413479A JPS55165681A JP S55165681 A JPS55165681 A JP S55165681A JP 7413479 A JP7413479 A JP 7413479A JP 7413479 A JP7413479 A JP 7413479A JP S55165681 A JPS55165681 A JP S55165681A
Authority
JP
Japan
Prior art keywords
layer
substrate
film
wiring layer
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7413479A
Other languages
English (en)
Other versions
JPH0456456B2 (ja
Inventor
Yoshikazu Obayashi
Masahiro Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7413479A priority Critical patent/JPS55165681A/ja
Publication of JPS55165681A publication Critical patent/JPS55165681A/ja
Publication of JPH0456456B2 publication Critical patent/JPH0456456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
JP7413479A 1979-06-11 1979-06-11 Preparation of semiconductor device Granted JPS55165681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7413479A JPS55165681A (en) 1979-06-11 1979-06-11 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7413479A JPS55165681A (en) 1979-06-11 1979-06-11 Preparation of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165681A true JPS55165681A (en) 1980-12-24
JPH0456456B2 JPH0456456B2 (ja) 1992-09-08

Family

ID=13538408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7413479A Granted JPS55165681A (en) 1979-06-11 1979-06-11 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165681A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543597A (en) * 1982-06-30 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic semiconductor memory and manufacturing method thereof
JPS61187330A (ja) * 1985-02-15 1986-08-21 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61194873A (ja) * 1985-02-25 1986-08-29 Toshiba Corp 半導体装置
JPH0226021A (ja) * 1988-07-14 1990-01-29 Matsushita Electron Corp 多層配線の形成方法
JPH02197120A (ja) * 1988-07-29 1990-08-03 Samsung Electron Co Ltd 半導体素子の金属配線方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (ja) * 1972-08-30 1974-04-24
JPS5372482A (en) * 1976-12-08 1978-06-27 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (ja) * 1972-08-30 1974-04-24
JPS5372482A (en) * 1976-12-08 1978-06-27 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4543597A (en) * 1982-06-30 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic semiconductor memory and manufacturing method thereof
JPS61187330A (ja) * 1985-02-15 1986-08-21 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61194873A (ja) * 1985-02-25 1986-08-29 Toshiba Corp 半導体装置
JPH0226021A (ja) * 1988-07-14 1990-01-29 Matsushita Electron Corp 多層配線の形成方法
JPH02197120A (ja) * 1988-07-29 1990-08-03 Samsung Electron Co Ltd 半導体素子の金属配線方法

Also Published As

Publication number Publication date
JPH0456456B2 (ja) 1992-09-08

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