JPS56148847A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56148847A JPS56148847A JP5309480A JP5309480A JPS56148847A JP S56148847 A JPS56148847 A JP S56148847A JP 5309480 A JP5309480 A JP 5309480A JP 5309480 A JP5309480 A JP 5309480A JP S56148847 A JPS56148847 A JP S56148847A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- layer
- silicon layer
- length
- superposed part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To make a polycrystalline silicon layer conductive by the introduction of impurity by one time by shortening the length of the superposed part of the polycrystalline silicon layers when a mutlilayer wire is formed using the polycrstalline silicon layer. CONSTITUTION:A field insulating film 2 is selectively formed on a P type silicon substrate 1, and a gate oxide film 3 is formed in the active region to form a transistor. After the first polycrystalline silicon layer 4 is patteered by a photoetching step, an insulating film 5 having a thickness of apporx. 0.5mum is formed on the layer 4. Subsequently, the second polycrystalline silicon layer 6 is covered on the entire surface, and when the layer 6 is patterned by a photoetching step, the length of the superposed part of the firt and the second polycrystalline silicon layers is shortened less than 5mum. When impurity is eventually introduced by an ion implantation, a diffusion or the like, the impuirty can be, since the length of the superposed part is short, uniformly introduced into the first and the second polycrystalline silicons.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5309480A JPS56148847A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5309480A JPS56148847A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56148847A true JPS56148847A (en) | 1981-11-18 |
Family
ID=12933189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5309480A Pending JPS56148847A (en) | 1980-04-22 | 1980-04-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56148847A (en) |
-
1980
- 1980-04-22 JP JP5309480A patent/JPS56148847A/en active Pending
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