JPS55157736A - Ionized radiation sensitive negative type resist - Google Patents
Ionized radiation sensitive negative type resistInfo
- Publication number
- JPS55157736A JPS55157736A JP6584179A JP6584179A JPS55157736A JP S55157736 A JPS55157736 A JP S55157736A JP 6584179 A JP6584179 A JP 6584179A JP 6584179 A JP6584179 A JP 6584179A JP S55157736 A JPS55157736 A JP S55157736A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- ionized radiation
- chloroacrylonitrile
- negative type
- radiation sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enhance the ionized radiation sensitivity of a resist and provide high dry etching resistance and high resolution to the resist by using a polymer contg. α-chloroacrylonitrile.
CONSTITUTION: A resist soln. is prepared by dissolving a homopolymer of α- chloroacrylonitrile represented by the formula or a copolymer of α-chloroacrylonitrile and other monomer such as ethyl acrylate or glycidyl methacrylate in a solvent such as methyl cellosolve acetate. The soln. is coated onto a Cr mask substrate and dried by heating in an N2 atmosphere to form a resist film. Thus, an ionized radiation sensitive negative type resist of high sensitivity is obtd.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6584179A JPS55157736A (en) | 1979-05-28 | 1979-05-28 | Ionized radiation sensitive negative type resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6584179A JPS55157736A (en) | 1979-05-28 | 1979-05-28 | Ionized radiation sensitive negative type resist |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55157736A true JPS55157736A (en) | 1980-12-08 |
JPS6131857B2 JPS6131857B2 (en) | 1986-07-23 |
Family
ID=13298635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6584179A Granted JPS55157736A (en) | 1979-05-28 | 1979-05-28 | Ionized radiation sensitive negative type resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55157736A (en) |
-
1979
- 1979-05-28 JP JP6584179A patent/JPS55157736A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6131857B2 (en) | 1986-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES480851A1 (en) | Article comprising a substrate and an overlying layer of electron beam radiation-sensitive material and process for fabrication thereof. | |
JPS5635130A (en) | Resist material and method for forming resist pattern | |
JPS5511217A (en) | Pattern forming method using radiation sensitive high polymer | |
JPS5466829A (en) | Pattern formation materil | |
JPS55157736A (en) | Ionized radiation sensitive negative type resist | |
JPS5518673A (en) | Ionized radiation sensitive negative type resist | |
JPS5466122A (en) | Pattern formation material | |
JPS5466776A (en) | Fine pattern forming method | |
JPS5614232A (en) | Negative type resist resin | |
JPS5619044A (en) | Positive type resist | |
JPS54145127A (en) | Pattern formation material | |
JPS578541A (en) | Positive type resist material | |
JPS56137348A (en) | Negative type ionized radiation sensitive resist | |
JPS5518672A (en) | Ionized radiation sensitive negative type resist | |
JPS5476136A (en) | Resist material for microprocessing | |
JPS5558243A (en) | Highly sensitive positive resist composition | |
JPS55149940A (en) | Negative type resist material | |
JPS54145126A (en) | Pattern formation material | |
JPS5518674A (en) | Ionized radiation sensitive negative type resist | |
JPS55151637A (en) | Radiation sensitive material and film forming method | |
JPS53120529A (en) | Forming method of positive type radiation sensitive material layer | |
JPS5674245A (en) | Pattern forming method | |
JPS56114943A (en) | Negative type resist material for electron beam | |
JPS5688135A (en) | Developer | |
JPS55147624A (en) | Ionized radiation sensitive positive type resist |