JPS55157736A - Ionized radiation sensitive negative type resist - Google Patents

Ionized radiation sensitive negative type resist

Info

Publication number
JPS55157736A
JPS55157736A JP6584179A JP6584179A JPS55157736A JP S55157736 A JPS55157736 A JP S55157736A JP 6584179 A JP6584179 A JP 6584179A JP 6584179 A JP6584179 A JP 6584179A JP S55157736 A JPS55157736 A JP S55157736A
Authority
JP
Japan
Prior art keywords
resist
ionized radiation
chloroacrylonitrile
negative type
radiation sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6584179A
Other languages
Japanese (ja)
Other versions
JPS6131857B2 (en
Inventor
Takama Mizoguchi
Tsukasa Tada
Masanobu Koda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6584179A priority Critical patent/JPS55157736A/en
Publication of JPS55157736A publication Critical patent/JPS55157736A/en
Publication of JPS6131857B2 publication Critical patent/JPS6131857B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To enhance the ionized radiation sensitivity of a resist and provide high dry etching resistance and high resolution to the resist by using a polymer contg. α-chloroacrylonitrile.
CONSTITUTION: A resist soln. is prepared by dissolving a homopolymer of α- chloroacrylonitrile represented by the formula or a copolymer of α-chloroacrylonitrile and other monomer such as ethyl acrylate or glycidyl methacrylate in a solvent such as methyl cellosolve acetate. The soln. is coated onto a Cr mask substrate and dried by heating in an N2 atmosphere to form a resist film. Thus, an ionized radiation sensitive negative type resist of high sensitivity is obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP6584179A 1979-05-28 1979-05-28 Ionized radiation sensitive negative type resist Granted JPS55157736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6584179A JPS55157736A (en) 1979-05-28 1979-05-28 Ionized radiation sensitive negative type resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6584179A JPS55157736A (en) 1979-05-28 1979-05-28 Ionized radiation sensitive negative type resist

Publications (2)

Publication Number Publication Date
JPS55157736A true JPS55157736A (en) 1980-12-08
JPS6131857B2 JPS6131857B2 (en) 1986-07-23

Family

ID=13298635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6584179A Granted JPS55157736A (en) 1979-05-28 1979-05-28 Ionized radiation sensitive negative type resist

Country Status (1)

Country Link
JP (1) JPS55157736A (en)

Also Published As

Publication number Publication date
JPS6131857B2 (en) 1986-07-23

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