JPS55156365A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55156365A JPS55156365A JP6321979A JP6321979A JPS55156365A JP S55156365 A JPS55156365 A JP S55156365A JP 6321979 A JP6321979 A JP 6321979A JP 6321979 A JP6321979 A JP 6321979A JP S55156365 A JPS55156365 A JP S55156365A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- electrode
- bonding pad
- film
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0554—External layer
- H01L2224/0555—Shape
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- H01L2224/05558—Shape in side view conformal layer on a patterned surface
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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- H01L2924/01006—Carbon [C]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01079—Gold [Au]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6321979A JPS55156365A (en) | 1979-05-24 | 1979-05-24 | Semiconductor device |
EP80102895A EP0019883B1 (en) | 1979-05-24 | 1980-05-23 | Semiconductor device comprising a bonding pad |
DE8080102895T DE3071718D1 (en) | 1979-05-24 | 1980-05-23 | Semiconductor device comprising a bonding pad |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6321979A JPS55156365A (en) | 1979-05-24 | 1979-05-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55156365A true JPS55156365A (en) | 1980-12-05 |
Family
ID=13222871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6321979A Pending JPS55156365A (en) | 1979-05-24 | 1979-05-24 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0019883B1 (ja) |
JP (1) | JPS55156365A (ja) |
DE (1) | DE3071718D1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5844730A (ja) * | 1981-09-11 | 1983-03-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の電極・配線 |
JPH0878410A (ja) * | 1994-09-05 | 1996-03-22 | Mitsubishi Electric Corp | 配線接続部及びその製造方法 |
JPH11250928A (ja) * | 1998-03-03 | 1999-09-17 | Toshiba Battery Co Ltd | ニッケル・水素二次電池 |
JPH11250891A (ja) * | 1998-03-03 | 1999-09-17 | Toshiba Battery Co Ltd | ニッケル・水素二次電池 |
US6692863B1 (en) | 1999-08-10 | 2004-02-17 | Sanyo Electric Co., Ltd. | Nonaqueous electrolyte secondary cells and process for fabricating same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4520554A (en) * | 1983-02-10 | 1985-06-04 | Rca Corporation | Method of making a multi-level metallization structure for semiconductor device |
GB2135123B (en) * | 1983-02-10 | 1987-05-20 | Rca Corp | Multi-level metallization structure for semiconductor device and method of making same |
JPS6459947A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Semiconductor device |
JPH03254137A (ja) * | 1990-03-05 | 1991-11-13 | Toshiba Corp | 半導体集積回路装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL159822B (nl) * | 1969-01-02 | 1979-03-15 | Philips Nv | Halfgeleiderinrichting. |
GB1468346A (en) * | 1973-02-28 | 1977-03-23 | Mullard Ltd | Devices having conductive tracks at different levels with interconnections therebetween |
FR2375718A1 (fr) * | 1976-12-27 | 1978-07-21 | Radiotechnique Compelec | Dispositif semiconducteur a reseau d'interconnexions multicouche |
-
1979
- 1979-05-24 JP JP6321979A patent/JPS55156365A/ja active Pending
-
1980
- 1980-05-23 EP EP80102895A patent/EP0019883B1/en not_active Expired
- 1980-05-23 DE DE8080102895T patent/DE3071718D1/de not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5844730A (ja) * | 1981-09-11 | 1983-03-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の電極・配線 |
JPS6243338B2 (ja) * | 1981-09-11 | 1987-09-12 | Nippon Denshin Denwa Kk | |
JPH0878410A (ja) * | 1994-09-05 | 1996-03-22 | Mitsubishi Electric Corp | 配線接続部及びその製造方法 |
JPH11250928A (ja) * | 1998-03-03 | 1999-09-17 | Toshiba Battery Co Ltd | ニッケル・水素二次電池 |
JPH11250891A (ja) * | 1998-03-03 | 1999-09-17 | Toshiba Battery Co Ltd | ニッケル・水素二次電池 |
US6692863B1 (en) | 1999-08-10 | 2004-02-17 | Sanyo Electric Co., Ltd. | Nonaqueous electrolyte secondary cells and process for fabricating same |
Also Published As
Publication number | Publication date |
---|---|
EP0019883B1 (en) | 1986-08-27 |
DE3071718D1 (en) | 1986-10-02 |
EP0019883A3 (en) | 1983-07-13 |
EP0019883A2 (en) | 1980-12-10 |
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