JPS55151366A - Fabricating method of semiconductor device - Google Patents
Fabricating method of semiconductor deviceInfo
- Publication number
- JPS55151366A JPS55151366A JP6018379A JP6018379A JPS55151366A JP S55151366 A JPS55151366 A JP S55151366A JP 6018379 A JP6018379 A JP 6018379A JP 6018379 A JP6018379 A JP 6018379A JP S55151366 A JPS55151366 A JP S55151366A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- patterns
- side surfaces
- polysilicon patterns
- disconnection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 8
- 229920005591 polysilicon Polymers 0.000 abstract 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6018379A JPS55151366A (en) | 1979-05-16 | 1979-05-16 | Fabricating method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6018379A JPS55151366A (en) | 1979-05-16 | 1979-05-16 | Fabricating method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55151366A true JPS55151366A (en) | 1980-11-25 |
Family
ID=13134783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6018379A Pending JPS55151366A (en) | 1979-05-16 | 1979-05-16 | Fabricating method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55151366A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890776A (ja) * | 1981-11-26 | 1983-05-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS62224962A (ja) * | 1986-03-26 | 1987-10-02 | Mitsubishi Electric Corp | 半導体装置 |
US6507072B2 (en) | 1993-03-16 | 2003-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor device and forming method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110582A (ja) * | 1974-02-07 | 1975-08-30 |
-
1979
- 1979-05-16 JP JP6018379A patent/JPS55151366A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110582A (ja) * | 1974-02-07 | 1975-08-30 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890776A (ja) * | 1981-11-26 | 1983-05-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS62224962A (ja) * | 1986-03-26 | 1987-10-02 | Mitsubishi Electric Corp | 半導体装置 |
US6507072B2 (en) | 1993-03-16 | 2003-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor device and forming method thereof |
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