JPS50110582A - - Google Patents

Info

Publication number
JPS50110582A
JPS50110582A JP1496774A JP1496774A JPS50110582A JP S50110582 A JPS50110582 A JP S50110582A JP 1496774 A JP1496774 A JP 1496774A JP 1496774 A JP1496774 A JP 1496774A JP S50110582 A JPS50110582 A JP S50110582A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1496774A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1496774A priority Critical patent/JPS50110582A/ja
Publication of JPS50110582A publication Critical patent/JPS50110582A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP1496774A 1974-02-07 1974-02-07 Pending JPS50110582A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1496774A JPS50110582A (ja) 1974-02-07 1974-02-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1496774A JPS50110582A (ja) 1974-02-07 1974-02-07

Publications (1)

Publication Number Publication Date
JPS50110582A true JPS50110582A (ja) 1975-08-30

Family

ID=11875733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1496774A Pending JPS50110582A (ja) 1974-02-07 1974-02-07

Country Status (1)

Country Link
JP (1) JPS50110582A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151366A (en) * 1979-05-16 1980-11-25 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JPS5731178A (en) * 1980-08-04 1982-02-19 Toshiba Corp Semiconductor device and manufacture thereof
US5952721A (en) * 1996-03-06 1999-09-14 Nec Corporation Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936785A (ja) * 1972-08-11 1974-04-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936785A (ja) * 1972-08-11 1974-04-05

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151366A (en) * 1979-05-16 1980-11-25 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JPS5731178A (en) * 1980-08-04 1982-02-19 Toshiba Corp Semiconductor device and manufacture thereof
US5952721A (en) * 1996-03-06 1999-09-14 Nec Corporation Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer

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