JPS55132079A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55132079A
JPS55132079A JP3916979A JP3916979A JPS55132079A JP S55132079 A JPS55132079 A JP S55132079A JP 3916979 A JP3916979 A JP 3916979A JP 3916979 A JP3916979 A JP 3916979A JP S55132079 A JPS55132079 A JP S55132079A
Authority
JP
Japan
Prior art keywords
layer
junction
small
electrode
dark current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3916979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222474B2 (enrdf_load_stackoverflow
Inventor
Kenshin Taguchi
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3916979A priority Critical patent/JPS55132079A/ja
Publication of JPS55132079A publication Critical patent/JPS55132079A/ja
Publication of JPS6222474B2 publication Critical patent/JPS6222474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP3916979A 1979-03-30 1979-03-30 Semiconductor device Granted JPS55132079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3916979A JPS55132079A (en) 1979-03-30 1979-03-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3916979A JPS55132079A (en) 1979-03-30 1979-03-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55132079A true JPS55132079A (en) 1980-10-14
JPS6222474B2 JPS6222474B2 (enrdf_load_stackoverflow) 1987-05-18

Family

ID=12545607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3916979A Granted JPS55132079A (en) 1979-03-30 1979-03-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55132079A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857760A (ja) * 1981-10-02 1983-04-06 Hitachi Ltd 光半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158292A (enrdf_load_stackoverflow) * 1973-11-28 1975-12-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158292A (enrdf_load_stackoverflow) * 1973-11-28 1975-12-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857760A (ja) * 1981-10-02 1983-04-06 Hitachi Ltd 光半導体装置

Also Published As

Publication number Publication date
JPS6222474B2 (enrdf_load_stackoverflow) 1987-05-18

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