JPS55132052A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55132052A
JPS55132052A JP3854879A JP3854879A JPS55132052A JP S55132052 A JPS55132052 A JP S55132052A JP 3854879 A JP3854879 A JP 3854879A JP 3854879 A JP3854879 A JP 3854879A JP S55132052 A JPS55132052 A JP S55132052A
Authority
JP
Japan
Prior art keywords
layer
resistance
collector
layers
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3854879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241424B2 (enExample
Inventor
Masatoshi Kaikon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP3854879A priority Critical patent/JPS55132052A/ja
Publication of JPS55132052A publication Critical patent/JPS55132052A/ja
Publication of JPS6241424B2 publication Critical patent/JPS6241424B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP3854879A 1979-03-31 1979-03-31 Semiconductor device Granted JPS55132052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3854879A JPS55132052A (en) 1979-03-31 1979-03-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3854879A JPS55132052A (en) 1979-03-31 1979-03-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55132052A true JPS55132052A (en) 1980-10-14
JPS6241424B2 JPS6241424B2 (enExample) 1987-09-02

Family

ID=12528336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3854879A Granted JPS55132052A (en) 1979-03-31 1979-03-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55132052A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812350A (ja) * 1981-07-16 1983-01-24 Nec Corp 半導体集積回路装置
JP2007525831A (ja) * 2003-12-31 2007-09-06 フリースケール セミコンダクター インコーポレイテッド 半導体部品の製造方法及びその方法により製造される半導体部品
JP2014229819A (ja) * 2013-05-24 2014-12-08 ルネサスエレクトロニクス株式会社 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812350A (ja) * 1981-07-16 1983-01-24 Nec Corp 半導体集積回路装置
JP2007525831A (ja) * 2003-12-31 2007-09-06 フリースケール セミコンダクター インコーポレイテッド 半導体部品の製造方法及びその方法により製造される半導体部品
JP2014229819A (ja) * 2013-05-24 2014-12-08 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
JPS6241424B2 (enExample) 1987-09-02

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