JPS55130542A - Exposing method - Google Patents
Exposing methodInfo
- Publication number
- JPS55130542A JPS55130542A JP3790479A JP3790479A JPS55130542A JP S55130542 A JPS55130542 A JP S55130542A JP 3790479 A JP3790479 A JP 3790479A JP 3790479 A JP3790479 A JP 3790479A JP S55130542 A JPS55130542 A JP S55130542A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- chamfered
- resist
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To enable a chamfered substrate and a chamfered mask to be easily separated by closely contacting the mask to the substrate to be treated and inserting wedges in the chamfered portions to separate them after exposure. CONSTITUTION:The resist-coated surface of substrate 2 to be treated is set opposite to mask 1, and mask 1 and substrate 2 are closely contacted by vacuum suction. In order to expose the resist, they are irradiated with ultraviolet rays from the mask 1 side. Wedge-form distance pieces 5 are then placed in previously chamfered portious 3, 4 of opposite edges of mask 1 and substrate 2, and by inserting pieces 5 in the arrow directions mask 1 and substrate 2 are separated. Suitable width l of portions 3, 4 is 1.5-2.5mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3790479A JPS55130542A (en) | 1979-03-30 | 1979-03-30 | Exposing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3790479A JPS55130542A (en) | 1979-03-30 | 1979-03-30 | Exposing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55130542A true JPS55130542A (en) | 1980-10-09 |
Family
ID=12510523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3790479A Pending JPS55130542A (en) | 1979-03-30 | 1979-03-30 | Exposing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130542A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5321574A (en) * | 1976-08-11 | 1978-02-28 | Mitsubishi Electric Corp | Contact and separation method of photo mask |
JPS5434778A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Mask aligner |
-
1979
- 1979-03-30 JP JP3790479A patent/JPS55130542A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5321574A (en) * | 1976-08-11 | 1978-02-28 | Mitsubishi Electric Corp | Contact and separation method of photo mask |
JPS5434778A (en) * | 1977-08-24 | 1979-03-14 | Hitachi Ltd | Mask aligner |
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