JPS55130192A - Method of fabricating semiconductor light emitting device - Google Patents
Method of fabricating semiconductor light emitting deviceInfo
- Publication number
- JPS55130192A JPS55130192A JP3822479A JP3822479A JPS55130192A JP S55130192 A JPS55130192 A JP S55130192A JP 3822479 A JP3822479 A JP 3822479A JP 3822479 A JP3822479 A JP 3822479A JP S55130192 A JPS55130192 A JP S55130192A
- Authority
- JP
- Japan
- Prior art keywords
- proton
- high resistance
- light emitting
- semiconductor light
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3822479A JPS55130192A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3822479A JPS55130192A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55130192A true JPS55130192A (en) | 1980-10-08 |
Family
ID=12519325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3822479A Pending JPS55130192A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130192A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226623A (ja) * | 1986-03-27 | 1987-10-05 | Nec Corp | 半導体装置 |
-
1979
- 1979-03-30 JP JP3822479A patent/JPS55130192A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62226623A (ja) * | 1986-03-27 | 1987-10-05 | Nec Corp | 半導体装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0030370B1 (en) | Ion implanted reverse-conducting thyristor | |
JPS55130192A (en) | Method of fabricating semiconductor light emitting device | |
JPS5615035A (en) | Manufacture of semiconductor device | |
JPS5587429A (en) | Manufacture of semiconductor device | |
JPS5856481A (ja) | ゲルマニウム受光素子の製造方法 | |
JPS645063A (en) | Hetero-junction bipolar transistor | |
JPS5539618A (en) | Manufacturing of semiconductor device | |
JPS55166975A (en) | Manufacture of semiconductor light emitting device | |
JPS63222489A (ja) | 半導体レ−ザの製造方法 | |
JPS57133626A (en) | Manufacture of semiconductor thin film | |
JPS63248168A (ja) | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 | |
JPS6474783A (en) | Semiconductor light-emitting device | |
JPS60182132A (ja) | 半導体装置の製造方法 | |
JPS5627922A (en) | Manufacture of semiconductor device | |
JPS57122578A (en) | Manufacture of schottky junction type semiconductor device | |
JPS5661179A (en) | Preparation of semiconductor radiation detector | |
JPS6473788A (en) | Light emitting semiconductor device | |
JPS55163874A (en) | Manufacture of semiconductor device | |
JPS5623775A (en) | Manufacture of integrated circuit | |
JPS5585025A (en) | Method of fabricating semiconductor wafer | |
JPS57198618A (en) | Manufacture of semiconductor device having multiple crystalline layer | |
JPS5478683A (en) | Manufacture of semiconductor laser | |
JPS5678120A (en) | Manufacture of compound semiconductor device | |
JPS5635487A (en) | Manufacture of semiconductor device | |
JPS5587446A (en) | Manufacture of semiconductor device |