JPS55130170A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS55130170A
JPS55130170A JP3687579A JP3687579A JPS55130170A JP S55130170 A JPS55130170 A JP S55130170A JP 3687579 A JP3687579 A JP 3687579A JP 3687579 A JP3687579 A JP 3687579A JP S55130170 A JPS55130170 A JP S55130170A
Authority
JP
Japan
Prior art keywords
region
gate
extension
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3687579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621264B2 (cs
Inventor
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3687579A priority Critical patent/JPS55130170A/ja
Publication of JPS55130170A publication Critical patent/JPS55130170A/ja
Publication of JPS621264B2 publication Critical patent/JPS621264B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP3687579A 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same Granted JPS55130170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3687579A JPS55130170A (en) 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3687579A JPS55130170A (en) 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same

Publications (2)

Publication Number Publication Date
JPS55130170A true JPS55130170A (en) 1980-10-08
JPS621264B2 JPS621264B2 (cs) 1987-01-12

Family

ID=12481946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3687579A Granted JPS55130170A (en) 1979-03-30 1979-03-30 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55130170A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816568A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd 絶縁ゲ−ト型電界効果半導体装置
JPS58182274A (ja) * 1982-04-20 1983-10-25 Seiko Epson Corp Ｍｏｓ型半導体装置
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
JPS6370575A (ja) * 1986-09-12 1988-03-30 Sony Corp Ｍｏｓ論理集積回路
US4785343A (en) * 1985-06-07 1988-11-15 Fujitsu Limited MIS FET semiconductor device with improved leakage current

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5816568A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd 絶縁ゲ−ト型電界効果半導体装置
JPS58182274A (ja) * 1982-04-20 1983-10-25 Seiko Epson Corp Ｍｏｓ型半導体装置
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
US4785343A (en) * 1985-06-07 1988-11-15 Fujitsu Limited MIS FET semiconductor device with improved leakage current
JPS6370575A (ja) * 1986-09-12 1988-03-30 Sony Corp Ｍｏｓ論理集積回路

Also Published As

Publication number Publication date
JPS621264B2 (cs) 1987-01-12

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