JPS5512768A - Manufactureing method of double-layer multi-crystal silicon structure mos type integrated circuit - Google Patents
Manufactureing method of double-layer multi-crystal silicon structure mos type integrated circuitInfo
- Publication number
- JPS5512768A JPS5512768A JP8579078A JP8579078A JPS5512768A JP S5512768 A JPS5512768 A JP S5512768A JP 8579078 A JP8579078 A JP 8579078A JP 8579078 A JP8579078 A JP 8579078A JP S5512768 A JPS5512768 A JP S5512768A
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystal silicon
- double
- integrated circuit
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8579078A JPS5512768A (en) | 1978-07-13 | 1978-07-13 | Manufactureing method of double-layer multi-crystal silicon structure mos type integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8579078A JPS5512768A (en) | 1978-07-13 | 1978-07-13 | Manufactureing method of double-layer multi-crystal silicon structure mos type integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5512768A true JPS5512768A (en) | 1980-01-29 |
Family
ID=13868675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8579078A Pending JPS5512768A (en) | 1978-07-13 | 1978-07-13 | Manufactureing method of double-layer multi-crystal silicon structure mos type integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5512768A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166124U (ja) * | 1982-04-28 | 1983-11-05 | 日本電気株式会社 | 弾性表面波遅延線 |
JPS59161911A (ja) * | 1983-03-07 | 1984-09-12 | Nippon Telegr & Teleph Corp <Ntt> | トランスバ−サルフイルタ |
JPH0573718A (ja) * | 1991-09-13 | 1993-03-26 | Matsushita Electric Ind Co Ltd | 領域属性識別方式 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5363879A (en) * | 1976-11-18 | 1978-06-07 | Mitsubishi Electric Corp | Production of semiconductor device |
-
1978
- 1978-07-13 JP JP8579078A patent/JPS5512768A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5363879A (en) * | 1976-11-18 | 1978-06-07 | Mitsubishi Electric Corp | Production of semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166124U (ja) * | 1982-04-28 | 1983-11-05 | 日本電気株式会社 | 弾性表面波遅延線 |
JPS59161911A (ja) * | 1983-03-07 | 1984-09-12 | Nippon Telegr & Teleph Corp <Ntt> | トランスバ−サルフイルタ |
JPH0573718A (ja) * | 1991-09-13 | 1993-03-26 | Matsushita Electric Ind Co Ltd | 領域属性識別方式 |
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