JPS55127559A - Blank mask for x-ray exposure and using method therefor - Google Patents

Blank mask for x-ray exposure and using method therefor

Info

Publication number
JPS55127559A
JPS55127559A JP3537479A JP3537479A JPS55127559A JP S55127559 A JPS55127559 A JP S55127559A JP 3537479 A JP3537479 A JP 3537479A JP 3537479 A JP3537479 A JP 3537479A JP S55127559 A JPS55127559 A JP S55127559A
Authority
JP
Japan
Prior art keywords
layer
mask
gas plasma
silicon
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3537479A
Other languages
Japanese (ja)
Other versions
JPS625332B2 (en
Inventor
Fumio Yamagishi
Yuji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3537479A priority Critical patent/JPS55127559A/en
Publication of JPS55127559A publication Critical patent/JPS55127559A/en
Publication of JPS625332B2 publication Critical patent/JPS625332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Abstract

PURPOSE:To enhance the yield of mask production without destroying a pattern support layer by making a window while leaving part of the silicon layer of a silicon support frame; using a blank mask on the frame to form a pattern on the mask; and performing gas plasma etching. CONSTITUTION:Window 7 is made by etching while leaving part of the silicon layer of silicon support frame 2, and gas plasma resistant layer 10 containing a gas plasma resistant material is formed between frame 2 and absorption body pattern support layer 5. Using blank mask 9 having layer 10 pattern 6 is formed on mask 9, and the residual silicon layer between window 7 and layer 10 is removed by dry etching with gas plasma to form mask 1 for X-ray exposure. Thus, the yield of mask production can be enhanced without destroying layer 5 owing to agitation of an etching solution.
JP3537479A 1979-03-26 1979-03-26 Blank mask for x-ray exposure and using method therefor Granted JPS55127559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3537479A JPS55127559A (en) 1979-03-26 1979-03-26 Blank mask for x-ray exposure and using method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3537479A JPS55127559A (en) 1979-03-26 1979-03-26 Blank mask for x-ray exposure and using method therefor

Publications (2)

Publication Number Publication Date
JPS55127559A true JPS55127559A (en) 1980-10-02
JPS625332B2 JPS625332B2 (en) 1987-02-04

Family

ID=12440118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3537479A Granted JPS55127559A (en) 1979-03-26 1979-03-26 Blank mask for x-ray exposure and using method therefor

Country Status (1)

Country Link
JP (1) JPS55127559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132343A (en) * 1980-03-22 1981-10-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Mask for x-ray exposure and its manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313879A (en) * 1976-07-23 1978-02-07 Nec Corp Silicon mask for x-ray exposure and its production
JPS5321576A (en) * 1976-08-11 1978-02-28 Fujitsu Ltd Mask for x-ray exposure
JPS53134367A (en) * 1977-04-28 1978-11-22 Toppan Printing Co Ltd Xxray mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313879A (en) * 1976-07-23 1978-02-07 Nec Corp Silicon mask for x-ray exposure and its production
JPS5321576A (en) * 1976-08-11 1978-02-28 Fujitsu Ltd Mask for x-ray exposure
JPS53134367A (en) * 1977-04-28 1978-11-22 Toppan Printing Co Ltd Xxray mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132343A (en) * 1980-03-22 1981-10-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Mask for x-ray exposure and its manufacture
JPS631740B2 (en) * 1980-03-22 1988-01-13 Cho Eru Esu Ai Gijutsu Kenkyu Kumiai

Also Published As

Publication number Publication date
JPS625332B2 (en) 1987-02-04

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